Buch, Englisch, 289 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 493 g
Buch, Englisch, 289 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 493 g
Reihe: Computational Microelectronics
ISBN: 978-3-7091-7193-6
Verlag: Springer Vienna
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Technik Allgemein Modellierung & Simulation
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik
- Mathematik | Informatik EDV | Informatik Professionelle Anwendung Computersimulation & Modelle, 3-D Graphik
Weitere Infos & Material
1. Introduction.- 2. State-of-the-Art of Materials, Device Modeling, and RF Devices.- 2.1 State-of-the-Art of Heterostructure RF Device Modeling.- 2.2 State-of-the-Art of Heterostructure Devices and Optimization Potentials.- 3. Physical Models.- 3.1 Sets of Partial Differential Equations.- 3.2 Lattice and Thermal Properties.- 3.3 Band Structure.- 3.4 Carrier Mobility.- 3.5 Energy and Momentum Relaxation.- 3.6 Generation and Recombination.- 4. RF Parameter Extraction for HEMTs and HBTs.- 4.1 RF Parameter Extraction Methods.- 4.2 Contributions to the Small-Signal EquivalentCircuit Element.- 5. Heterojunction Bipolar Transistor.- 5.1 General Considerations.- 5.2 SiGe HBTs.- 5.3 High-Power GaAs HBTs.- 5.4 High-Speed InP HBTs.- 6. High Electron Mobility Transistor.- 6.1 General Considerations.- 6.2 High-Speed and High-Power AlGaAs/InGaAs PHEMTs.- 6.3 High-Speed InAlAs/InGaAs HEMTs on InP and GaAs.- 6.4 High-Power High-Speed AlGaN/GaN HEMTs.- 7. Novel Devices.- 7.1 InP DHBTs with GaAsSb Bases.- 7.2 AlGaN/GaN HBTs.- A. Appendix: Benchmark Structures.- Reference.- List of Figures.- List of Tables.
