Palankovski / Quay Analysis and Simulation of Heterostructure Devices

2004
ISBN: 978-3-7091-0560-3
Verlag: Springer Wien
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 289 Seiten, eBook

Reihe: Computational Microelectronics

The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Zielgruppe

Research

Autoren/Hrsg.

Palankovski, Vassil

Quay, Rüdiger

Inhaltsverzeichnis

List of Acronyms List of Symbols Introduction State-of-the-Art of Materials, Device Modeling, and RF Devices Physical Models RF Parameter Extraction for HEMTs and HBTs Heterojunction Bipolar Transistors High Electron Mobility Transistors Novel Devices Appendix: Benchmark Structures References