Emerging Non-Volatile Memories

2014
ISBN: 978-1-4899-7536-2
Verlag: Springer US

Buch, Englisch, 273 Seiten, Format (B × H): 160 mm x 241 mm, Gewicht: 6083 g

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. EmergingNon-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.

This book also:

Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.

Provides an overview of non-volatile memory fundamentals.

Broadens readers’ understanding of future trends in non-volatile memories.

Zielgruppe

Research

Autoren/Hrsg.

Hong, Seungbum

Wouters, Dirk

Auciello, Orlando

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Mathematik | Informatik EDV | Informatik Technische Informatik Hardware: Grundlagen und Allgemeines

Inhaltsverzeichnis

Part I: Ferroic Memories.- Review of the Science and Technology for Low and High-density Non-volatile Ferroelectric Memories.- Hybrid CMOS/magnetic memories (MRAM) and logic circuits.- Emerging Multi-Ferroic Memories.- Part II: Resistance and Phase Change Memories.- Phase-Change Materials for Data Storage Applications.- Emerging Oxide Resistance Change Memories.- Oxide based memristive nanodevices.- Part III: Probe Memories.- Ferroelectric Probe Storage Devices.