Buch, Englisch, 301 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 589 g
Buch, Englisch, 301 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 589 g
ISBN: 978-981-4241-93-9
Verlag: Pan Stanford
This book examines single-electron circuits as an introduction to the rapidly expanding field of nanoelectronics. It discusses both the analysis and synthesis of circuits with the nanoelectronic metallic single-electron tunneling (SET) junction device. The basic physical phenomena under consideration are the quantum mechanical tunneling of electrons through a small insulating gap between two metal leads, the Coulomb blockade and Coulomb oscillations — the last two resulting from the quantization of charge. The author employs an unconventional approach in explaining the operation and design of single-electron circuits.
Zielgruppe
Academic and Postgraduate
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Tunneling Experiments in Nanoelectronics. Current in Electrodynamics and Circuit Theory. Free Electrons in Quantum Mechanics. Current and Tunnel Current in Quantum Physics. Energy in Circuit Theory. Energy in the Switched Two-Capacitor Circuit. Impulse Circuit Model for Single-Electron Tunneling — Zero Tunneling Time. Impulse Circuit Model for Single-Electron Tunneling — Nonzero Tunneling Times. Generalizing the Theory to Multi-Junction Circuits. Single-Electron Tunneling Circuit Examples. Circuit Design Methodologies. More Potential Applications and Challenges.