Hoekstra Introduction to Nanoelectronic Single-Electron Circuit Design

1. Auflage 2013
ISBN: 978-981-4241-63-2
Verlag: Pan Stanford Publishing
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 301 Seiten

This book examines single-electron circuits as an introduction to the rapidly expanding field of nanoelectronics. It discusses both the analysis and synthesis of circuits with the nanoelectronic metallic single-electron tunneling (SET) junction device. The basic physical phenomena under consideration are the quantum mechanical tunneling of electrons through a small insulating gap between two metal leads, the Coulomb blockade and Coulomb oscillations — the last two resulting from the quantization of charge. The author employs an unconventional approach in explaining the operation and design of single-electron circuits.

Zielgruppe

Advanced undergraduate- and graduate-level students in electrical engineering, physics, nanotechnology, computer engineering, and mechanical engineering, especially those with an interest in MEMS.

Autoren/Hrsg.

Hoekstra, Jaap

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Tunneling Experiments in Nanoelectronics
Current in Electrodynamics and Circuit Theory
Free Electrons in Quantum Mechanics
Current and Tunnel Current in Quantum Physics
Energy in Circuit Theory
Energy in the Switched Two-Capacitor Circuit
Impulse Circuit Model for Single-Electron Tunneling — Zero Tunneling Time
Impulse Circuit Model for Single-Electron Tunneling — Nonzero Tunneling Times
Generalizing the Theory to Multi-Junction Circuits
Single-Electron Tunneling Circuit Examples
Circuit Design Methodologies
More Potential Applications and Challenges

Über Autor(innen)

Jaap Hoekstra was born in Amsterdam, the Netherlands, in 1955. He received an MSc in experimental physics from the University of Amsterdam and a PhD degree for research on (junction) charge-coupled devices, involving device physics, device development and subsystem concepts, from the Delft University of Technology, the Netherlands. From 1988 to 1995 he was at the Computer Architecture Laboratory at the TU-Delft working in the field of artificial neural networks. From 1996 to 1997 he worked on chaotic dynamics in power systems at the laboratory of Electrical Power Systems. In April 1997 he joined the Electronic Research Laboratory, where he is currently involved in research projects on artificial neural nets, biologic-inspired networks, neuromorphic circuits, nanoscale electronic devices, and single-electron tunneling devices.