Sonstiges, Englisch, 290 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 290 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-03859-607-3
Verlag: Trans Tech Publications
Defect and Diffusion Forum Vol. 59
Autoren/Hrsg.
Weitere Infos & Material
Point Defects and Diffusion in Silicon and Gallium ArsenideDiffusion and Low Temperature Deformation by Diffusional Creep of Nanocrystalline MaterialsDopant and Ion Beam Enhanced Grain Growth in Polycrystalline Silicon FilmsInterface Segregation and CohesionOxidation of High Technology MaterialsInterstitial-Substitutional Diffusion in Group III-V and Group IV Semiconductors: The Role of DislocationsDiffusion Barriers - For Thin Film MetallizationsContact Metallization for GaAs - A Report on the Development of a Non-Alloyed Ohmic Contact SchemeHigh Density Interconnect for Advanced VLSI PackagingDiffusion in Metallic Thin FilmsHigh Resolution Transmission Electron Microscopy of Grain BoundariesTunneling Microscopy of Surface DiffusionCharacterization of Interfacial Chemistry by Analytical Electron MicroscopySolute Interactions in MetalsOxygen Diffusion in High Tc-SuperconductorsTracer Diffusion of 60Co and 63Ni in Amorphous NiZr AlloyTracer Diffusion in Pure and Boron-Doped Ni3AlThe Behavior of Transition Metals in Silicon during Annealing TransientsSuppression of Vacancy Diffusion during Short Range OrderingCrystallization and Diffusion Studies in Amorphous Ni-Zr Thin FilmsCompound Formation and Interfacial Instability in the Au-Cu-Sn System at Low Temperature
