Sonstiges, Englisch, 1932 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 1932 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-03859-840-4
Verlag: Trans Tech Publications
Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Autoren/Hrsg.
Weitere Infos & Material
Recent Measurements and Theory Relating to Impurity-Induced LVMS in GaP and GaAsOptically-Induced Defects in Si-H NanoparticlesDefects and Doping in III-V NitridesA Programme for the Future?The Hydrogen-Saturated Self-Interstitial in Silicon and GermaniumMatrix-Induced Isotope Shift of a Vibrational Mode of Interstitial Oxygen in GermaniumIsotopic Shifts of the Rotational States of Interstitial Oxygen in GermaniumDLTS Combined with Perturbed Angular Correlation (PAC) on Radioactive 111In Atoms in GeMicroscopic Study of the Vacancy and Self-Interstitial in Germanium by PACLocalization of Nondegenerate Electrons at Random Potential of Charged ImpuritiesResonance Acceptor States and THz Generation in Uniaxially Strained p-GeIonized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,AsDefects in SiGeAcceptor States in Boron Doped SiGe Quantum WellsSubstitutional Carbon in Ge and Si1-xGex.Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-GeOptical Investigation of Ge-Rich Ge1-xSix (0= x = 0.1) AlloysElectrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si1-xGexLattice Defects in Si1-xGex Epitaxial Diodes Induced by 20-MeV Alpha RaysPositron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk AlloysElectronic Properties of Defects Introduced in n- and p-Type Si1-xGex During Ion EtchingThe Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam EpitaxyGold-Related Levels in Relaxed Si1-xGex Alloy Layers: A Study of the Pinning EffectDislocation-Related Electronic States in Strain-Relaxed Si1-xGex/Si Epitaxial Layers Grown at Low TemperatureDislocation Activities in Bulk GeSi CrystalsSchottky Diodes on Si1-x-yGexCy Alloys: Measurement of Band Off-Set by DLTSMolecular-Dynamics Simulations of Microscopic Defects in SiliconComparison of Muonium (Hydrogen) Dynamics in Germanium and SiliconHydrogenation and Passivation of B in Si by Boiling in Water Pressurized up to 10 ATMLow Temperature Hydrogen Diffusion in Silicon: Influence of Substrate Quality and the Surface DamageMechanism of Ultrasonic Enhanced Hydrogenation in Poly-Si Thin FilmsHydrogen Molecules in Crystalline SiliconThermal Stability of Hydrogen Molecule in Crystalline SiliconEmission and Capture Kinetics for a Hydrogen-Related Negative-U Center in Silicon: Evidence for Metastable Neutral Charge StateIR Studies of Si-H Bond-Bending Vibrational Modes in SiOptical Absorption Due to Hydrogen Bound to Interstitial Si in Si Crystal Grown in Hydrogen AtmosphereTrapping Site of Hydrogen Molecule in Crystalline SiliconFormation and Structure of Hydrogen Molecules in Crystalline SiStructure and Charge-State-Dependent Instability of a Hydrogen-Carbon Complex in SiliconThe Trapping of Hydrogen at Carbon Defects in SiliconThe M-Line (760.8 me V) Luminescence System Associated with the Carbon-Hydrogen Acceptor Centre in SiliconInterstitial Carbon-Hydrogen Defects in SiliconLow-Temperature Migration of Hydrogen and Interaction with OxygenAnomalous Shift of the 1075 cm-1 Oxygen-Hydrogen Defect in SiliconVibrational Absorption from Oxygen-Hydrogen (Oi-H2) Complexes in Hydrogenated CZ SiliconThe I Centre: A Hydrogen Related Defect in SiliconTheory of Gold-Hydrogen Complexes in SiliconElectrically Active Silver-Hydrogen Complexes in SiliconPalladium-Hydrogen Related Complexes in SiliconEffects of Hydrogen Plasma on Dislocation Motion in SiliconHydrogenation of Copper Related Deep States in n-Type Si Containing Extended DefectsHydrogenation of Deep Defect States in n-Type Si Containing Extended Defects and Transition Metal (Ni or Fe)Metastable Defects and Recombination in Hydrogenated Amorphous SiliconTracing Diffusion by Laplace Deep-Level SpectroscopyDefects in AS-Grown Silicon and their Evolution During Heat TreatmentsAn Investigation of the Possibility that Oxygen Diffusion in Czochralski Silicon is Catalyzed during ClusteringTemperature-Dependent Widths of Infrared and Far-Infrared Absorption Lines of Oxygen in SiliconThe Oxygen Dimer in Silicon: Some Experimental ObservationsFormation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 ?CHigh-Field EPR Spectroscopy of Thermal Donors in SiliconShallow Thermal Donors in Annealed CZ Silicon and Links to the NL10 EPR Spectrum: The Relevance of H, Al and N ImpuritiesFormation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 ?CLocal Vibrational Modes of Weakly Bound O-H Complexes in SIPhonon Scattering in Heat-Treated Cz-SiliconDetermination of Stoichiometry and Oxygen Content in Platelike and Octahedral Oxygen Precipitates in Silicon with FT-IR SpectroscopyInfluence of the Li Concentration on the Photoluminescence Spectra of Neutron-Irradiated Silicon:Passivation of Radiation Induced CentersElectric-Dipole Spin Resonance of Be-Doped SiliconCadmium-Related Defects in Silicon: Electron-Paramagnetic-Resonance IdentificationIron in p-Type Silicon: A Comprehensive ModelM?ssbauer Spectroscopy of Fe in Silicon with the Novel Laser-Ionized 57Mn+ Ion Beam at IsoldeRecombination-Enhanced Fe Atom Jump of Fe-Acceptor Pairs in SiPrecipitation of Iron in FZ and CZ SiliconThe Orthorhombic FeIn Complex in SiliconCopper in Silicon: Quantitative Analysis of Internal and Proximity GetteringA Study of the Copper-Pair Related Centers in SiliconThe Photoluminescence of Pt-Implanted SiliconIdentification of the Si:Au and Si:Pt 1S3/2(?8)+? Phonon-Assisted Fano ResonanceSilver-Related Donor Defect in SiliconIsolated Substitutional Silver and Silver-Induced Defects in Silicon: An Electron Paramagnetic Resonance InvestigationPseudo or Deep Donor Excitation Spectra in SiliconVacancies and Interstitial Atoms in e?-Irradiated SiliconVacancy Aggregates in SiliconIdentification of VH in Silicon by EPRNovel Luminescent Centres in Cadmium Doped SiliconDefect Clusters in Silicon: Impact on the Performance of Large-Area DevicesModeling of Self-Interstitial Clusters and their Formation Mechanism in SiSelf-Interstitials in Irradiated SiliconHigh Resolution EELS Study of Extended Defects in SiliconElectron Irradiation Effects in Silicon Thin Foils Under Ultra-High Vacuum EnvironmentApplication of Spin Dependent Recombination for Investigation of Point Defects in Irradiated SiliconElectrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion BombardmentFano Resonance in a Vibronic Sideband in SiliconFrenkel Pairs and Impurity-Defect Interactions in p-Type Silicon Irradiated with Fast Electrons and Gamma-Rays at Low TemperaturesImpurity-Vacancy Complexes Formed by Electron Irradiation of Czochralski SiliconLuminescence Centers in High-Energy Ion-Implanted SiliconPerformance Degradation of Microcrystalline Silicon-Based p-i-n Detectors Upon He4 IrradiationPersistent Excited Conductivity Induced by Proton Irradiation in a-Si:HPhotoluminescence Centers Associated with Noble-Gas Impurities in SiliconImplantation of Reactive and Unreactive Ions in SiliconPhotoluminescence Vibrational Spectroscopy of Defects Containing the Light Impurities Carbon and Oxygen in SiliconRaman Scattering Measurements in Neutron-Irradiated SiliconRecombination Centers in Electron Irradiated Si and GaAsStudy of a Li- and C-Related Center Formed at High Annealing Temperatures in Neutron-Irradiated FZ Silicon Doped with LiThe Influence of Accumulated Defects on the Lateral Spread of Implanted IonsStructural Change and Relaxation Processes of Tetrahedral Point DefectsThe Jahn-Teller Effect and the Structure of Monovacancies in Si, SiC and CTransient Lattice Vibration Induced by Successive Carrier Captures at a Deep-Level Defect and the Effect on Defect ReactionsCharacterisation of Recombination Centres in Solar Cells by DLTSDefect-Engineering Rad-Hard Detectors for the CERN LHCTheory of 3d Transition Metal Defects in 3C-SiCA Deep Photoluminescence Band in 4H SiC Related to the Silicon VacancyThermal Activation Energies for the Three Inequivalent Lattice Sites for the BSi Acceptor in 6H-SiCOptical Absorption and Zeeman Study of 6H-SiC:CrHigh-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiCGas and Heat Treatment Effects on the Defect Structure of a-SiC:H FilmsCapacitance Spectroscopy of Deep Centres in SiCNative and Electron Irradiation Induced Defects in 6H-SiCRaman Scattering Analysis of Defects in 6H-SiC Induced by Ion ImplantationVacancy-Type Defects in Proton-Irradiated SiCTheoretical Studies on Defects in SiCFormation and Relaxation of Hydrogen-Related Defects in the Subsurface Region of Diamond FilmsHydrogen and Hydrogen-Like Defects in DiamondFine Structure of the Boron Bound Exciton in DiamondInvestigation of Ion-Implanted Boron in DiamondIsotopic Shifts of the N3 Optical Transition in DiamondBreakdown of the Vacancy Model for Impurity-Vacancy Defects in DiamondA First Principles Study of Interstitial Si in DiamondRadiation Damage of Silicon and Diamond by High Energy Neutrons, Protons and a ParticlesStudy of Defects in Diamond Films by Electrical MeasurementsValence Controls and Codoping for Low-Resistivity n-Type Diamond by Ab Initio Molecular-Dynamics SimulationIntrinsic Modulation Doping in InP-Based HeterostructuresPressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP HeterostructuresStudy of Iron-Related Defects in SI-InP by Positron Annihilation SpectroscopyHomogeneity of Fe-Doped InP Wafers Using Optical MicroprobesOsmium Related Deep Levels in p-InP and their Interaction with Alpha RadiationA Sharp Defect-Annealing Stage Below Room Temperature in Irradiated N-Type Indium PhosphideAlpha Radiation-Induced Deep Levels in p-InPSite Stability, Diffusion, and Charge Dynamics for Muonium in GaAsStructure and Reorientation of the SiAs-H and ZnGa-H Complexes in Gallium ArsenideAb Initio Study of the CAs Local Oscillator in Gallium ArsenideSpectroscopy of Nitrogen-Related Centers in Gallium ArsenideAtomic Configuration of Oxygen Negative-U Center in GaAsGa Vacancies as Compensating Centers in Homogeneously or d-Doped GaAs(Si) LayersPositron Annihilation and Scanning Tunneling Microscopy Used to Characterise Defects in Highly Si-Doped GaAsChemical Trends in Electronic Properties of Arsenic Vacancy-3d Transition Metal Pairs in Gallium ArsenidePerturbed Angular Correlation Measurements and Lattice Site Location of Br in GaAsEquilibrium Vacancies in Te-Doped GaAs Studied by Positron AnnihilationSpectroscopic Investigation of Neutral Niobium in GaAsYb Luminescence Centres in MBE-Grown and Ion-Implanted GaAsArsenic Interstitial Pairs in GaAsElectrical Properties of Low Temperature Grown GaAsTraps Found in GaAs MESFETs: Properties Location and DetectionInfluence of Dopant Species on Electron Mobility in Heavily Doped SemiconductorsCreation of GaAs Antisites in GaAs by Transmutation of Radioactive 71AsAs to Stable 71GaAsDefect Control in As-Rich GaAsAs Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low TemperatureElectrically Detected Magnetic Resonance at Different Microwave FrequenciesMetastable Antisite Pair in GaAsTheoretical Study of Antistructure Defects in GaAsStudy of Plastically Deformed Semiconductors by Means of Positron AnnihilationThe Micro Structure of the EL2 Defect in GaAs - A Different Look to Former Spin Resonance DataDetection and Identification of the EL2 Metastable in GaAsDefects in Thick Epitaxial GaAs LayersEffects of Copper Diffusion on the Native Defect EL2 in GaAsEL2 Induced Enhancement of the Donor Acceptor Pair Luminescence in GaAsObservation of Persistent Electron Capture in N-Type Gallium Arsenide Studied by Optically Detected Magnetic ResonanceODMR Investigation of Proton Irradiated GaAsUniaxial-Stress Symmetry Studies on the E1, E2 and E3 Irradiation-Induced Defects in Gallium ArsenideMagnetic Resonance and Positron Annihilation of Intrinsic Acceptors in ITC-Treated GaAsDefects in Neutron Irradiated, LEC Semi-Insulating GaAsElectrical Characterization of Defects Introduced During Plasma-Based Processing of GaAsMetastable Charge Recovery in Plasma-Irradiated ?-GaAsMetastable Amorphous Structure in Ion Implanted GaAsTheory of Nitrogen-Hydrogen Complexes in GaPPhotoluminescence, Optical Absorption, and EPR Studies of the Co2+-SP Pair Defect in GaPResonance-Mode Phonon Replica in the Optical Spectra of Transition-Metal Impurities in GaPGaN Grown Using Trimethylgallium and TriethylgalliumODMR Studies of AS-Grown and Electron-Irradiated GaN and AlNElectrical and Optical Characterization of Defects in GaN Generated by Ion ImplantationImplantation Doping and Hydrogen Passivation of GaNElectrically and Optically Detected Magnetic Resonance in GaN-Based LEDsDonor-Acceptor Pair Transitions in GaNAB Initio Studies of Atomic-Scale Defects in GaN and AlNPhotoluminescence Dynamics in the Near Bandgap Region of Homoepitaxial GaN LayersZeeman Study of the 0.9 eV Emission in AlN and GaNA First-Principles Study of Mg-Related Defects in GaNImpact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaNOn the Origin of the Yellow Donor-Acceptor Pair Emission in GaNBlue Emission in Mg Doped GaN Studied by Time Resolved SpectroscopyGaN Doped with SulfurIdentification of Iron Transition Group Trace Impurities in GaN Bulk Crystals by Electron Paramagnetic ResonanceLocal Vibrational Modes at Transition-Metal Impurities in Hexagonal AlN and GaN CrystalsLocal Vibrational Modes at AsN in Cubic GaN: Comparing Ab-Initio Calculations to a Semi-Empirical ModelA Codoping Method in GaN Proposed by Ab Initio Electronic-Structure CalculationsPhotoluminescence of Donor Acceptor Pair Transitions in Hexagonal and Cubic MBE-Grown GaNRaman Scattering from Defects in GaNStructural and Electrical Properties of Threading Dislocations in GaNDefects Analysis in Strained InAlAs and InGaAs Films Grown on (111)B InP SubstratesIrradiation Induced Lattice Defects in In0.53Ga0.47As Pin PhotodiodesAcceptor-Hydrogen Interaction in InAsElectroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaNEffect of Neutron Irradiation on Ga-Based SemiconductorsPolaron Coupling for Sulphur Impurity in GaSbResonant Interaction Between Local Vibrational Modes and Extended Lattice Phonons in AlSbDefect Reactions in Low Temperature Electron Irradiated AlAs Investigated by Measurements of the Lattice ParameterTransition from Tunneling to Poole-Frenkel Type Transport in Aluminum-NitrideGrowth Surface Dependence of Cathodoluminescence of Cubic Boron NitrideN-Vacancy Defects in c-BN and w-BNMultiphonon-Assisted Tunnel Ionisation of Deep Impurities in High-Frequency Electric FieldLong-Range Lattice Relaxation for Donor Centers in Supercell MethodDecay Kinetics of Growth-Induced Alignment of the First Neighbor Shell of CAs in AlxGa1-xAsPlausible Evidence of Existence of Deep Acceptors in Si d-Doped AlGaAsMagneto-Optical and Magnetic Resonance Investigations of Intrinsic Defects in Electron-Irradiated n-Type AlxGa1-xAsGallium Interstitials in GaAs/AlGaAs Heterostructures Investigated by Optically and Electrically Detected Magnetic ResonanceODMR Investigations of Ge Acceptors in p-Type Al0.4Ga0.6AsInverted Charge States of Anion and Cation-Site Vacancies in Zinc Blende Semiconductors:TheoryDegradation in II-VI Laser DiodesDefect Characterization of II-VI Compound Semiconductors Using Positron Lifetime SpectroscopyDefect Structures in Heavily In-Doped II-VI SemiconductorsThe Role of Cation Vacancy in Compensation of II-VI Compounds by Fast Diffusors - Example of Cu in CdSExperimental Evidence for the Two-Electron Nature of In-Related DX States in CdTeNature of Dislocation-Related Deep Level Defects in CdSNMR Study of Carrier States and Trapping Complexes in the Transparent Conductor ZnO:MIIICathodoluminescence Study on the Hydrogenation of ZnO LuminescenceObservation of Frenkel Pairs on Both Sublattices of Electron Irradiated ZnSeInterface Defects and their Effect on the Electrical Properties of ZnSe/GaAs Heterojunctions Grown by MBEDonor Doping of ZnSe: Lattice Location and Annealing Behavior of Implanted BoronDetermination of the Lattice Site of Nitrogen after Implantation into ZnSeCharge Transfer at Ti Ions in ZnTeBistable Centers in CdMnTeSe:In and CdMnTe:Ga Crystals Studied by Light-Induced GratingsDeep Levels in Cd0.99Mn0.01Te:GaVacancy-Type Defects in Electron and Proton Irradiated II-VI CompoundsUV Enhanced and Solar Blind Photodetectors Based on Large-Band-Gap MaterialsLattice Relaxation of In Donors in CdF2Shallow Electron Centres in CdF2:M3+ and Silver HalidesEPR Investigation of Metastable Donor States in CdF2:In, GaPhotoinduced Magnetism in CdF2 with Bistable Donors: The Clue for the Negative U?Evidence of Metastable Deep Acceptors in AgGaS2 from Time-Resolved EmissionA Positron Lifetime Study of Lattice Defects in Chalcopyrite SemiconductorsMagnetooptical Characterization of CuIn(Ga)Se2Defects Spectroscopy in ?-Ga2O3Bistability of Oxygen Vacancy in Silicon DioxideEnergy Transfer Processes at Erbium Ions in SiliconEnergy Transfer Rate Between Erbium 4? Shell and Si HostPhotoluminescence Study of Erbium in Silicon with a Free-Electron LaserDirect Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900?CPhoto- and Electroluminescence of Erbium-Doped SiliconDonor Centers in Er-Implanted SiliconStructural Defects and Photoluminescence in Dislocation-Rich Erbium-Doped SiliconInfluence of Fabrication Conditions on Properties of Si:Er Light-Emitting StructuresHigh Temperature Luminescence Due to Er in Porous SiElectron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals1.54 ?m Luminescence in Er and Er+O Implanted 6H SiCErbium Related Defects in Gallium ArsenideElectron Spin Resonance of Er-Oxygen Complexes in GaAsEr Centers in GaAs Studied by Optical Spectroscopy Under Hydrostatic PressureEXAFS Measurement on Local Structure Around Erbium Atoms Doped in GaAs with Oxygen Co-DopingLuminescence and Annealing Studies of Er-Implanted GaN with and without Oxygen Co-DopingEr-Luminescence in MBE-Grown AlGaAsCrystal-Field Transitions of Nd3+ and Er3+ in Perovskite-Type CrystalsExcitation and De-Excitation of Erbium Ions in Semiconductor MatricesMechanism of Generation of F-F Radiation in Semiconductor HeterostructuresInfrared Induced Emission From Silicon Quantum WiresAcceptor States in Boron Doped SiGe Quantum WellsCoulomb Interaction between Carriers Localized in InAs/GaAs Quantum Dots and on Point DefectsInfluence of Erbium Doping on Structure and Optical Properties of the InGaAs/GaAs SuperlatticesDefect Formation During Laser Induced Intermixing of GaAs/AlGaAs Multiple-Quantum-Well StructuresLocalized Epitaxy for Vertical Cavity Surface Emitting Laser ApplicationsThe Long Wavelength Luminescence Observation from the Self-Organized InGaAs Quantum Dots Grown on (100) GaAs Substrate by Metalorganic Chemical Vapor Deposition.Deep Hole Traps in Be-Doped Al0.5Ga0.5 As MBE LayersNanotubes and Pinholes in GaN and their Formation MechanismDefect-Related Recombination Processes in Low-Dimensional Structures of ZnCdSe/ZnSe, CdTe/CdMnTe and GaAs/AlGaAsStudy of Hole Traps in p-Type ZnSe and ZnSSe Epilayers by DLTS and Admittance SpectroscopyAuger-Type Nonradiative Recombination Processes in Bulk and in Quantum Well Structures of II-VI Semiconductors Containing Transition Metal IonsSpin-Dependent Processes in Self-Assembly Impurity Quantum WiresComparison between AS-Grown and Annealed Quantum Dots MorphologyEPR Studies of Magnetic SuperlatticesEr Diffusion and Er-Induced Ga-Al Interdiffusion in GaAs/AlGaAs Quantum StructuresGround and Excited States of D? Centres in Semiconductor Quantum DotsElectron Spin Resonance Features of the Pb1 Interface Defect in Thermal (100)Si/SiO2Silicon Surface Defects: The Roles of Passivation and Surface ContaminationHeat-Treatment Induced Modifications of Porous SiliconLuminescence Due to Electron-Hole Condensation in Silicon-On-Insulator and its Application to Defect and Interface CharacterizationDeep Electronic States at the Inverted AlAs/GaAs Interface Under Different Growth ModesTEM-Study of Frank Partial Dislocations in ZnSe/GaAs(001) Caused by Substrate-PreparationDefect Formation and Electronic Transport at AlGaN/GaN InterfacesCharacterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al2O3(0001) Studied by TEMFormation Kinetics of the Al-Related Shallow Thermal Donors: A Probe for Oxygen Diffusion in SiliconDiffusion and Precipitation of Oxygen in Silicon Doped with GermaniumThe Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in SiliconEPR Evidence of Hydrogen-Enhanced Diffusion of Aluminum in SiliconSegregation of Gold at Dislocations Confirmed by Gold Diffusion into Highly Dislocated SiliconAnnealing of Low-Temperature Substitutional Gold in Silicon: Ring-Diffusion of Substitutional Gold in SiliconRate Limiting Mechanism of Transition Metal Gettering in Multicrystalline SiliconIntrinsic Point Defect Engineering in Silicon High-Voltage Power Device TechnologyInfluence of the Dislocation Loops on the Anomalous Diffusion of Fe Implanted into InPLithium Induced Vacancy Formation and its Effect on the Diffusivity of Lithium in Gallium ArsenideAb-Initio Investigations on Diffusion of Halogen Atoms in GaAsLow Temperature Intrinsic Diffusion Coefficient of Lithium in GaAsLow Temperature Impurity Diffusion into Large-Band-Gap SemiconductorsBackground Doping Effects on Zn Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures
