Davies / Nazaré Defects in Semiconductors 19

Erscheinungsjahr 1997
ISBN: 978-3-0357-0524-9
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection

E-Book, Englisch, 1932 Seiten

Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.Volume is indexed by Thomson Reuters CPCI-S (WoS).

Autoren/Hrsg.

Davies, Gordon

Nazaré, Maria Helena

Inhaltsverzeichnis

Acknowledgements
Recent Measurements and Theory Relating to Impurity-Induced LVMS in GaP and GaAs
Optically-Induced Defects in Si-H Nanoparticles
Defects and Doping in III-V Nitrides
A Programme for the Future?
The Hydrogen-Saturated Self-Interstitial in Silicon and Germanium
Matrix-Induced Isotope Shift of a Vibrational Mode of Interstitial Oxygen in Germanium
Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium
DLTS Combined with Perturbed Angular Correlation (PAC) on Radioactive 111In Atoms in Ge
Microscopic Study of the Vacancy and Self-Interstitial in Germanium by PAC
Localization of Nondegenerate Electrons at Random Potential of Charged Impurities
Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge
Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As
Defects in SiGe
Acceptor States in Boron Doped SiGe Quantum Wells
Substitutional Carbon in Ge and Si1-xGex.
Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge
Optical Investigation of Ge-Rich Ge1-xSix (0= x = 0.1) Alloys
Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si1-xGex
Lattice Defects in Si1-xGex Epitaxial Diodes Induced by 20-MeV Alpha Rays
Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys
Electronic Properties of Defects Introduced in n- and p-Type Si1-xGex During Ion Etching
The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy
Gold-Related Levels in Relaxed Si1-xGex Alloy Layers: A Study of the Pinning Effect
Dislocation-Related Electronic States in Strain-Relaxed Si1-xGex/Si Epitaxial Layers Grown at Low Temperature
Dislocation Activities in Bulk GeSi Crystals
Schottky Diodes on Si1-x-yGexCy Alloys: Measurement of Band Off-Set by DLTS
Molecular-Dynamics Simulations of Microscopic Defects in Silicon
Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon
Hydrogenation and Passivation of B in Si by Boiling in Water Pressurized up to 10 ATM
Low Temperature Hydrogen Diffusion in Silicon: Influence of Substrate Quality and the Surface Damage
Mechanism of Ultrasonic Enhanced Hydrogenation in Poly-Si Thin Films
Hydrogen Molecules in Crystalline Silicon
Thermal Stability of Hydrogen Molecule in Crystalline Silicon
Emission and Capture Kinetics for a Hydrogen-Related Negative-U Center in Silicon: Evidence for Metastable Neutral Charge State
IR Studies of Si-H Bond-Bending Vibrational Modes in Si
Optical Absorption Due to Hydrogen Bound to Interstitial Si in Si Crystal Grown in Hydrogen Atmosphere
Trapping Site of Hydrogen Molecule in Crystalline Silicon
Formation and Structure of Hydrogen Molecules in Crystalline Si
Structure and Charge-State-Dependent Instability of a Hydrogen-Carbon Complex in Silicon
The Trapping of Hydrogen at Carbon Defects in Silicon
The M-Line (760.8 me V) Luminescence System Associated with the Carbon-Hydrogen Acceptor Centre in Silicon
Interstitial Carbon-Hydrogen Defects in Silicon
Low-Temperature Migration of Hydrogen and Interaction with Oxygen
Anomalous Shift of the 1075 cm-1 Oxygen-Hydrogen Defect in Silicon
Vibrational Absorption from Oxygen-Hydrogen (Oi-H2) Complexes in Hydrogenated CZ Silicon
The I Centre: A Hydrogen Related Defect in Silicon
Theory of Gold-Hydrogen Complexes in Silicon
Electrically Active Silver-Hydrogen Complexes in Silicon
Palladium-Hydrogen Related Complexes in Silicon
Effects of Hydrogen Plasma on Dislocation Motion in Silicon
Hydrogenation of Copper Related Deep States in n-Type Si Containing Extended Defects
Hydrogenation of Deep Defect States in n-Type Si Containing Extended Defects and Transition Metal (Ni or Fe)
Metastable Defects and Recombination in Hydrogenated Amorphous Silicon
Tracing Diffusion by Laplace Deep-Level Spectroscopy
Defects in AS-Grown Silicon and their Evolution During Heat Treatments
An Investigation of the Possibility that Oxygen Diffusion in Czochralski Silicon is Catalyzed during Clustering
Temperature-Dependent Widths of Infrared and Far-Infrared Absorption Lines of Oxygen in Silicon
The Oxygen Dimer in Silicon: Some Experimental Observations
Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C
High-Field EPR Spectroscopy of Thermal Donors in Silicon
Shallow Thermal Donors in Annealed CZ Silicon and Links to the NL10 EPR Spectrum: The Relevance of H, Al and N Impurities
Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C
Local Vibrational Modes of Weakly Bound O-H Complexes in SI
Phonon Scattering in Heat-Treated Cz-Silicon
Determination of Stoichiometry and Oxygen Content in Platelike and Octahedral Oxygen Precipitates in Silicon with FT-IR Spectroscopy
Influence of the Li Concentration on the Photoluminescence Spectra of Neutron-Irradiated Silicon:Passivation of Radiation Induced Centers
Electric-Dipole Spin Resonance of Be-Doped Silicon
Cadmium-Related Defects in Silicon: Electron-Paramagnetic-Resonance Identification
Iron in p-Type Silicon: A Comprehensive Model
Mössbauer Spectroscopy of Fe in Silicon with the Novel Laser-Ionized 57Mn+ Ion Beam at Isolde
Recombination-Enhanced Fe Atom Jump of Fe-Acceptor Pairs in Si