Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications

Softcover Nachdruck of the original 1. Auflage 2017
ISBN: 978-981-13-5123-5
Verlag: Springer Nature Singapore

Buch, Englisch, 124 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 224 g

Reihe: Springer Theses

This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.

Zielgruppe

Research

Autoren/Hrsg.

Zhu, Min

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik

Inhaltsverzeichnis

Acknowledge.- Abstract.- Introduction.- Component Optimization of Sb-Te in Ti-Sb-Te Phase Change Materials.- Component Optimization of Ti in Ti-Sb Te Phase Change Materials.- Optimization Component Ti Sb Te .- Influence of Temperature on Performance of Ti Sb Te Based Device.- Phase Change Mechanism of Ti Sb Te Alloy.- Ti Sb Te Based Phase Change Memory Chip.- Summary.- References.- Published Papers and Patents.- Bibliography.

Über Autor(innen)

Min Zhu received his B.Sc. in Electronics Science and Technology from Hubei University, China in 2009, and completed his Ph.D. in Microelectronics and Solid-State Electronics at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences in 2014. His major research project in Prof. Zhitang Song’s group concerned a Ti-Sb-Te alloy for high-speed and low-power phase change memory. Subsequently, he received an Alexander von Humboldt Research Fellowship and became a post-doctoral fellow working with Prof. Matthias Wuttig at RWTH Aachen University, investigating the crystallization behavior of phase change materials.