Buch, Englisch, Band 133, 574 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 879 g
Reihe: Lecture Notes in Physics
Proceedings of the International Summer School Held in Nîmes, France, September 3 - 15, 1979
Buch, Englisch, Band 133, 574 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 879 g
Reihe: Lecture Notes in Physics
ISBN: 978-3-540-10261-8
Verlag: Springer Berlin Heidelberg
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Weitere Infos & Material
General introduction.- Band structure of narrow gap semiconductors.- Dielectric anomalies in zero-gap semiconductors.- Electron scattering and classical transport phenomena in small-gap semiconductors.- Phonons in narrow gap semiconductors.- Intraband magneto-optics in InSb-type semiconductors.- Interband magnetooptics in narrow gap semiconductors.- Spin-flip Raman scattering and associated X(3) nonlinearities.- Impurity states in high magnetic fields.- Landau emission in semiconductors.- The Shubnikov-De Haas effect and the magnetic freeze out.- Electronic properties of cadmium arsenide.- Quantum transport in narrow-gap semiconductors.- Some aspects of the high field magnetoresistance in semiconductors.- Narrow-gap semimagnetic semiconductors.- Magnetic properties of narrow gap semiconductors.- Electronic Raman scattering in narrow gap semiconductors.- InAs-GaSb superlattices — synthesized narrow-gap semiconductors and semimetals.- On impurity states in gapless semiconductors.- Resonant states in semiconductors some applications of the Slater-Koster model.- Stress deformation effects on narrow gap semiconductors.- Hot electrons in narrow gap semiconductors.- Photogalvanic effects in noncentrosymmetric semiconductors.- Defects in IV–VI compounds.- Magnetooptical properties of IV–VI compounds.- Magnetoplasma waves in semiconductors.- Phase transition in IV-VI compounds.- Electric subbands in narrow gap semiconductors.- Surface-charge layers on the narrow gap semiconductors.- Crystal growth of narrow gap semiconductors theory and techniques.- Narrow-gap semiconductor detectors and lasers.
