Wright / Johnson / Vassilevski Silicon Carbide and Related Materials 2006

Erscheinungsjahr 2007
ISBN: 978-3-03813-116-8
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection

E-Book, Englisch, 1100 Seiten

Volume is indexed by Thomson Reuters CPCI-S (WoS).Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are wide-bandgap semiconductors which also possess extraordinary chemical, electrical and optical properties that make them uniquely attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to survive harsh operating conditions.

Autoren/Hrsg.

Wright, Nicholas G.

Johnson, C. Mark

Vassilevski, Konstantin

Nikitina, Irina P.

Horsfall, Alton B.

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Chapter 1: SiC Bulk Growth

1.1 Hexagonal SiC
Quality Aspects for the Production of SiC Bulk Crystals
An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
Growth and Characterization of 13C Enriched 4H-SiC for Fundamental Materials Studies
Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals
Growth Induced Stacking Fault Formation in 4H-SiC
Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method
1.2 3C-SiC
Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution
Chapter 2: SiC Epitaxy

2.1 Homoepitaxial Growth
Growth and Electrical Characterization of 4H-SiC Epilayers
Growth of SiC from a Liquid Phase at Low Temperature
Thick Epilayer for Power Devices
4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate
A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process
Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling
Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates
CVD of 6H-SiC on Non-Basal Quasi Polar Faces
Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices

Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient
Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth
Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition

Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route
Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers

High Quality Uniform SiC Epitaxy for Power Device Applications
High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism
Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection

Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors

Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers

In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition
In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD
Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate

Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive
Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization
Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices
Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System
Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method
SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties
Very High Growth Rate Epitaxy Processes with Chlorine Addition
2.2 Heteroepitaxial Growth
SiC Heteropolytype Structures Grown by Sublimation Epitaxy
Carbonization of Porous Silicon for 3C-SiC Growth
Carbonization Study of Different Silicon Orientations

Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates
Heavily Doped Polycrystalline 3C-SiC Growth on SiO2/Si (100) Substrates for Resonator Applications
Hetero-Epitaxial Growth of 3C-SiC on Si (111) by Plasma Assisted CVD

How to Grow 3C-SiC Single Domain on a-SiC(0001) by Vapor-Liquid-Solid Mechanism
Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive
Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC
Mechanism of Orientation Selection for the Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals on Hexagonal Basis
Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si

Trends in Dopant Incorporation for 3C-SiC Films on Silicon

Chapter 3: SiC Characterization and Theory

3.1 Structural
Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps
6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction
Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias
An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers
Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide
Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)
Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping
Defect Etching of Non-Polar and Semi-Polar Faces in SiC
Dislocation in 4H n+ SiC Substrates and their Relationship with Epilayer Defects
Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging
Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence
Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth
Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals
In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC
Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process
Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
Partial Dislocations under Forward Bias in SiC
Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System
The DI Defect is Associated with a Stacking Fault?
Trends in Commercially Available SiC Substrates
Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy
XRD and Photoluminescence Whole-Wafer Mapping of 4H-SiC Wafers
XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution
3.2 Optical and Electrical
(Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory
Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC
A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC
Carrier Lifetime Analysis by Microwave Photoconductive Decay (µ-PCD) for 4H SiC Epitaxial Wafers
Contactless Electrical Defect Characterization and Topography of a-Plane Grown Epitaxial Layers
Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy
Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC
Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes
Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC
Electrical Characterisation of 4H-SiC Epitaxial Samples Treated by Hydrogen or Helium
Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC
EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies
Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method
FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS
Impurity Conduction in Silicon Carbide
Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes
Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons
Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers
Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer
Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations
Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range
Optical and Electron Paramagnetic Resonance Study of Sponge Silicon Carbide Prepared by Direct Synthesis
Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS
Photoluminescence of 6H-SiC Nanostructures
Properties of Different Room-Temperature Photoluminescence Bands in 4H-SiC Substrates Investigated by Mapping Techniques
Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates
Reverse Biased Electrochemical Etching of SiC-SBD
Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy
Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure
The Premature Breakdown in 6H-SiC p-n Junction
Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide
3.3 Defects
Point Defects and their Aggregation in Silicon Carbide
A Theoretical Study on Aluminium-Related Defects in SiC
Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC
Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC

Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis
Influence Of Growth Conditions on Irradiation Induced Defects in 4H-SiC
Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation
New Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiC
Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition
SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts

Atomic Crack Defects Developing at Silicon Carbide Surfaces Studied by STM, Synchrotron Radiation-Based µ-spot XPS and LEEM
Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps
Ab Initio Study of Clean and Hydrogen-Saturated Unreconstructed SiC{0001} Surfaces
An Approach to Model Temperature Effects of Interface Traps in 4H-SiC
Conductive Atomic Force Microscopy Studies on the Reliability of Thermally Oxidized SiO2/4H-SiC
Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism
Ellipsometric and MEIS Studies of 4H-SiC/Si/SiO2 and 4H-SiC/SiO2 Interfaces for MOS Devices
Etching of 4° and 8° 4H-SiC Using Various Hydrogen-Propane Mixtures in a Commercial Hot-Wall CVD Reactor
Formation of Deep Traps at the 4H-SiC/SiO2 Interface when Utilizing Sodium Enhanced Oxidation
Generation of Amorphous SiO2/SiC Interface Structure by the First-Principles Molecular Dynamics Simulation
Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy
Nanowire Reconstruction on the 4H-SiC(1102) Surface
Structure of the 3C-SiC(100) 5x2 Surface Reconstruction Investigated by Synchrotron Radiation Based Grazing Incidence X-Ray Diffraction

The Al2O3/4H-SiC Interface Investigated by Thermal Dielectric Relaxation Current Technique
The Mechanism of Interface State Passivation by NO
Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy
XPS Study of the Electronic Properties of the Ce/4H-SiC Interface, and the Formation of the SiO2/Ce2Si2O7/4H-SiC Interface Structure upon Oxidation
Chapter 4: SiC Processing

4.1 Doping and Implantation
Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum
Post-Implantation Annealing of SiC: Relevance of the Heating Rate
Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process
Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC
Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate
Encapsulating Annealing of N+ Implanted 4H-SiC by Diamond-Like-Carbon Film
High Temperature Implantation of Aluminum in 4H Silicon Carbide
Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC
Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics
Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study
Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation
Selenium and Tellurium Double Donors in SiC
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

4.2 Dielectrics and Passivation Layers
Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles

Trap Assisted Gas Sensing Mechanism in MISiC Capacitors
4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al2O3
A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain
Acceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC Wafers
Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose
Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)
Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy
Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation
Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application
Interface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O Oxidation
Modification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor Annealing
Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices
Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices
Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC
Trap Assisted Conduction in High K Dielectric Capacitors on 4H-SiC
X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC
4.3 Contacts, Etching and Packaging
A Case for High Temperature, High Voltage SiC Bipolar Devices
Ab Initio Study of the Structural and Electronic Properties of the Graphene/SiC{0001} Interface
Development of Low Resistance Al/Ti Stacked Metal Contacts to p-Type 4H-SiC
Electronic Structure of Graphite/6H-SiC Interfaces
Evaluation of Specific Contact Resistance of Al, Ti, and Ni Contacts to N Ion Implanted 3C-SiC(100)
High Temperature Direct Double Side Cooled Inverter Module for Hybrid Electric Vehicle Application
Interface Reactions and Electrical Properties of Ta/4H-SiC Contacts

Low Resistance Cathode Metallization and Die-Bonding in Silicon Carbide P-N Junction Diodes

Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates
Nanolayered Au/Ti/Al Ohmic Contacts to P-Type SiC: Electrical, Morphological and Chemical Properties Depending on the Contact Composition

Plasma Etching for Backside Wafer Thinning of SiC
Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl2-O2 Thermal Etching
The Schottky Parameter Test for Combined Diffusion Welded and Sputter Large Area Contacts
4.4 Porous SiC
Nano-Columnar Pore Formation in the Photo-Electrochemical Etching of n-Type 6H SiC

Porosity Dependence of the Velocity of Surface and Bulk Acoustic Waves in Porous Silicon Carbide Films

4.5 Surface Treatment
Damage-Free Planarization of 4H-SiC (0001) by Catalyst-Referred Etching
High Throughput SiC Wafer Polishing with Good Surface Morphology
Polishing Characteristics of 4H-SiC Si-Face and C-Face by Plasma Chemical Vaporization Machining
Chapter 5: SiC Devices

5.1 Transistors
4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates
4H-SiC Power BJTs with High Current Gain and Low On-Resistance
9 kV 4H-SiC IGBTs with 88 mO·cm2 of R diff, on
A Comparison of High Temperature Performance of SiC DMOSFE