Nanoscale Spectroscopy and Its Applications to Semiconductor Research

Softcover Nachdruck of the original 1. Auflage 2002
ISBN: 978-3-662-14372-8
Verlag: Springer

Buch, Englisch, Band 588, 308 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 499 g

Reihe: Lecture Notes in Physics

Fabrication technologies for nanostructured devices have been developed recently, and the electrical and optical properties of such nanostructures are a subject of advanced research.
This book describes the different approaches to spectroscopic microscopy, i.e., Electron Beam Probe Spectroscopy, Spectroscopic Photoelectron Microscopy, and Scanning Probe Spectroscopy. It will be useful as a compact source of reference for the experienced reseracher, taking into account at the same time the needs of postgraduate students and nonspecialist researchers by using a tutorial approach throughout.

Zielgruppe

Research

Autoren/Hrsg.

Watanabe, Y.

Yamamoto, N.

Heun, S.

Salviati, G.

Fachgebiete

• Technische Wissenschaften Technik Allgemein Nanotechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Naturwissenschaften Chemie Analytische Chemie Massenspektrometrie, Spektroskopie, Spektrochemie
• Interdisziplinäres Wissenschaften Wissenschaften: Allgemeines

Inhaltsverzeichnis

Spectro-microscopy by TEM-SEM.- Determination of Nanosize Particle Distribution by Low Frequency Raman Scattering: Comparison to Electron Microscopy.- Development of Cathodoluminescence (CL) for Semiconductor Research, Part I: TEM-CL Study of Microstructures and Defects in Semiconductor Epilayers.- Development of CL for Semiconductor Research, Part II: Cathodoluminescence Study of Semiconductor Nanoparticles and Nanostructures Using Low-Electron-Beam Energies.- Development of CL for Semiconductor Research, Part III: Study of Degradation Mechanisms in Compound Semiconductor-Based Devices by SEM-CL.- Microcharacterization of Conformal GaAs on Si Layers by Spatially Resolved Optical Techniques.- Strain Analysis in Submicron Electron Devices by Convergent Beam Electron Diffraction.- Synchrotron Radiation X-ray Microscopy Based on Zone Plate Optics.- Long-Term Oxidation Behaviour of Lead Sulfide Surfaces.- Cross-Sectional Photoemission Spectromicroscopy of Semiconductor Heterostructures.- Surface Imaging Using Electrons Excited by Metastable-Atom Impacts.- Application of Photoemission Electron Microscopy to Magnetic Domain Imaging.- Photoelectron Spectroscopy with a Photoemission Electron Microscope.- X-ray Photoemission and Low-Energy Electron Microscope.- Application of Imaging-Type Photoelectron Spectromicroscopy to Solid-State Physics.- Scanning Near-Field Optical Spectroscopy of Quantum-Confined Semiconductor Nanostructures.- Novel Tuning Fork Sensor for Low-Temperature Near-Field Spectroscopy.- Manipulating, Reacting, and Constructing Single Molecules with a Scanning Tunneling Microscope Tip.- Electron-Beam-Induced Decomposition of SiO2 Overlay on Si in STM Nanolithography.- Direct Imaging of InGaAs Quantum Dot States by Scanning Tunneling Spectroscopy.- Growth and Characterization of Ge Nanostructures on Si(111).- Imaging of Zero-Dimensional States in Semiconductor Nanostructures Using Scanning Tunneling Microscopy.- Electronic-Excitation-Induced Enhancement in Metallicity on HOPG and Si Surfaces: In Situ STM/STS Studies.- Electronic Properties of Polycrystalline and Amorphous WO3 Investigated with Scanning Tunnelling Spectroscopy.- Probing of Electronic Transitions with Atomic-Scale Spatial Resolution in Semiconductor Quantum Well Structures.- Scanning Tunneling Microscope-Induced Light Emission from Nanoscale Structures.