Metallic Spintronic Devices

1. Auflage 2014
ISBN: 978-1-4665-8844-8
Verlag: CRC Press

Buch, Englisch, 274 Seiten, Format (B × H): 157 mm x 234 mm, Gewicht: 590 g

Reihe: Devices, Circuits, and Systems

Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also:

- Describes spintronic applications in current and future magnetic recording devices

- Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling

- Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis

- Investigates spintronic device write and read optimization in light of spintronic memristive effects

- Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects

- Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic

Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.

Zielgruppe

Experts in spintronics, practitioners in the magnetics and semiconductors industries, graduate students, researchers, and academia.

Autoren/Hrsg.

Wang, Xiaobin

Fachgebiete

• Naturwissenschaften Physik Physik Allgemein
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise

Inhaltsverzeichnis

Perpendicular Spin Torque Oscillator and Microwave-Assisted Magnetic Recording. Spin-Transfer-Torque MRAM: Device Architecture and Modeling. The Prospect of STT-RAM Scaling. Spintronic Device Memristive Effects and Magnetization Switching Optimizing. Magnetic Insulator-Based Spintronics: Spin Pumping, Magnetic Proximity, Spin Hall, and Spin Seebeck Effects on Yttrium Iron Garnet Thin Films. Electric Field-Induced Switching for Magnetic Memory Devices.

Über Autor(innen)

Xiaobin Wang is director at Avalanche Technology and consultant at Caraburo Consulting LLC and Ingredients LLC. He holds a Ph.D from the University of California, San Diego. Dr. Wang has published over 100 articles and holds 50 US patents, approved or pending. He previously worked at Western Digital and Seagate Technology. His work in memory and data storage includes device design, advanced technology gap closure, prediction of system performance through bottom-up (from physics to system performance) and top-down (from system performance to component requirements) approaches, company product platform and basic technology roadmap modeling, new concept initiation, and intellectual property analysis.