Buch, Englisch, Band 186, 379 Seiten, Format (B × H): 160 mm x 241 mm, Gewicht: 7806 g
Buch, Englisch, Band 186, 379 Seiten, Format (B × H): 160 mm x 241 mm, Gewicht: 7806 g
Reihe: Springer Series in Materials Science
ISBN: 978-1-4614-8120-1
Verlag: Springer
Bismuth-containing compounds comprise a relatively unexplored materials system that is expected to offer many unique and desirable optoelectronic, thermoelectric, and electronic properties for innovative device applications. This book serves as a platform for knowledge sharing and dissemination of the latest advances in novel areas of bismuth-containing compounds for materials and devices, and provides a comprehensive introduction to those new to this growing field. Coverage of bismides includes theoretical considerations, epitaxial growth, characterization, and materials properties (optical, electrical, and structural). In addition to the well-studied area of highly mismatched Bi-alloys, the book covers emerging topics such as topological insulators and ferroelectric materials. Built upon fundamental science, the book is intended to stimulate interest in developing new classes of semiconductor and thermoelectric materials that exploit the properties of Bismuth. Application areas for bismide materials include laser diodes for optical communications, DVD systems, light-emitting diodes, solar cells, transistors, quantum well lasers, and spintronic devices.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Verbundwerkstoffe
Weitere Infos & Material
Preface
Chapter 1: Dilute Bismides for Mid-IR Applications
Chapter 2: Bismide-based photonic devices for near- and mid-infrared applications
Chapter 3: Theory of the electronic structure of dilute bismide alloys: Tight-binding and k_p models
Chapter 4: Dilute bismuthides on an InP platform
Chapter 5: Atmospheric-pressure metalorganic vapor phase epitaxy of GaAsBi alloy on GaAs substrate
Chapter 6: Group III-V bismide materials grown by liquid phase epitaxy
Chapter 7: Spectroscopic Ellipsometry of AP-MOVPE grown GaAsBi dilute alloys
Chapter 8: Effect of bismuth alloying on the transport properties of the dilute bismide alloy, GaAsBiChapter 9: Localized states in GaAsBi and GaAs/GaAsBi heterostructures
Chapter 10: Unusual Bi-containing surface layers of III-V compound semiconductors
Chapter 11: MBE growth of thin hexagonal films Bi2Te3, Bi2Se3, and their alloys on cubic GaAs (001) substrates
Chapter 12: Vapor Phase Deposition Synthesis of Bismuth-Based Topological Insulator Nanoplates and Their Electrostatic Properties
Chapter 13: Electronic and optical properties of domain walls and phase boundaries in bismuth ferrite
Chapter 14: Syntheses and Properties of Some Bi-Containing Compounds with Noncentrosymmetric Structure
Chapter 15: Bismuth(V)-containing semiconductor compounds and applications in heterogeneous photocatalysis
Index
