Failure Analysis of Integrated Circuits

Tools and Techniques
1999
ISBN: 978-0-412-14561-2
Verlag: Springer US

Buch, Englisch, Band 494, 255 Seiten, HC runder Rücken kaschiert, Format (B × H): 160 mm x 241 mm, Gewicht: 1250 g

Reihe: The Springer International Series in Engineering and Computer Science

provides a basic understanding of how the most commonly used tools and techniques in silicon-based semiconductors are applied to understanding the root cause of electrical failures in integrated circuits. These include applications specific to performing failure analysis such as decapsulation, deprocessing, and fail site isolation, as well as physical and chemical analysis tools and techniques. The coverage is qualitative, and it provides a general understanding for making intelligent tool choices. Also included is coverage of the shortcomings, limitations, and strengths of each technique.
is a `must have' reference work for semiconductor professionals and researchers.

Zielgruppe

Research

Autoren/Hrsg.

Wagner, Lawrence C.

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Verbundwerkstoffe
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren

Inhaltsverzeichnis

1 Introduction.- 1.1 Electrical Characterization.- 1.2 Die Exposure.- 1.3 Fail Site Isolation.- 1.4 Package Analysis.- 1.5 Physical and Chemical Analysis.- 1.6 Diagnostic Activities.- 1.7 Root Cause and Corrective Action.- 1.8 Conclusion.- 2 Electrical Characterization.- 2.1 Electrical Characterization.- 2.2 Curve Tracing.- 2.3 Electrical Characterization of State Dependent Logic Failures.- 2.4 Memory Functional Failures.- 2.5 Challenges of Analog Circuit Fault Isolation and Analog Building Blocks.- 2.6 Future Challenges for Circuit Characterization.- 3 Package Analysis: SAM and X-ray.- 3.1 The Scanning Acoustic Microscope.- 3.2 The Real-Time X-Ray Inspection System.- 3.3 Application Examples.- 3.4 Summary and Trends in Nondestructive Inspection.- 4 Die Exposure.- 4.1 Didding Cavity Packages.- 4.2 Decapsulation of Plastic Packages.- 4.3 Alternative Decapsulation Methods.- 4.4 Backside Preparation for Characterization and Analysis.- 4.5 Future Requirements.- 5 Global Failure Site Isolation: Thermal Techniques.- 5.1 Blackbody Radiation and Infrared Thermography.- 5.2 Liquid Crystals.- 5.3 Fluorescent Microthermal Imaging.- 5.4 Conclusion.- 6 Failure Site Isolation: Photon Emission Microscopy Optical/Electron Beam Techniques.- 6.1 Photon Emission Microscopy.- 6.2 Active Photon Probing.- 6.3 Active Electron Beam Probing.- 6.4 Future Developments for Photon and Electron Based Failure Analysis.- 7 Probing Technology for IC Diagnosis.- 7.1 Probing Applications and Key Probing Technologies.- 7.2 Mechanical Probing.- 7.3 E-beam Probing.- 7.4 Navigation and Stage Requirements.- 7.5 FIB for Probing and Prototype Repair.- 7.6 Backside Probing for Flip Chip IC.- 8 Deprocessing.- 8.1 IC Wafer Fabrication.- 8.2 Deprocessing Methods.- 8.3 New Challenges.- 9 Cross-section Analysis.- 9.1Packaged Device Sectioning Techniques.- 9.2 Wafer Cleaving.- 9.3 Die Polishing Techniques.- 9.4 Cross Section Decoration: Staining.- 9.5 Focused Ion Beam (FIB) Techniques.- 9.6 Sectioning Techniques for TEM Imaging.- 9.7 Future Issues.- 10 Inspection Techniques.- 10.1 Microscopy.- 10.2 Optical Microscopy.- 10.3 Scanning Electron Microscopy.- 10.4 Focused Ion Beam Imaging.- 10.5 Transmission Electron Microscopy.- 10.6 Scanning Probe Microscopy.- 10.7 Future Considerations.- 11 Chemical Analysis.- 11.1 Incident Radiation Sources.- 11.2 Radiation-Sample Interaction.- 11.3 Radiation Flux.- 11.4 Detectors.- 11.5 Common Analysis Techniques.- 11.6 Microspot FTIR.- 11.7 Other Techniques.- 11.8 Conclusion.- 12 Energy Dispersive Spectroscopy.- 12.1 Characteristic X-Ray Process and Detection.- 12.2 Quantitative Analysis.- 12.3 Sample Considerations.- 12.4 EDS Applications.- 12.5 Future Considerations.- 13 Auger Electron Spectroscopy.- 13.1 The Auger Electron Process.- 13.2 AES Instrumentation and Characteristics.- 13.3 AES Data Collection and Analysis.- 13.4 Specimen, Material, and AES Operational Concerns.- 13.5 AES in Failure Analysis.- 13.6 Conclusion.- 14 Secondary Ion Mass Spectrometry, SIMS.- 14.1 Basic SIMS Theory and Instrumentation.- 14.2 Operational Modes, Artifacts, and Quanitification.- 14.3 Magnetic Sector SIMS Applications.- 14.4 Quadrupole SIMS Applications.- 14.5 Time-of-Flight SIMS Applications.- 14.6 Future SIMS Issues.- 15 Failure Analysis Future Requirements.- 15.1 IC Technology Trends Driving Failure Analysis.- 15.2 Global Failure Site Isolation.- 15.3 Development in Probing.- 15.4 Deprocessing Difficulties.- 15.5 Defect Inspection - A Time vs. Resolution Tradeoff.- 15.6 Failure Analysis Alternatives.- 15.7 Beyond the Roadmap.