Semiconductors and Nanostructures

An Introduction
1. Auflage 2026
ISBN: 978-1-032-96051-7
Verlag: Taylor & Francis Ltd

Buch, Englisch, 150 Seiten, Format (B × H): 156 mm x 234 mm

Reihe: Textbook Series in Physical Sciences

Semiconductors and Nanostructures: An Introduction provides a rigorous yet accessible introduction to semiconductor physics. Bridging the gap between introductory quantum mechanics and advanced semiconductor courses, it offers a compact yet comprehensive overview that empowers students to understand and engage with both fundamental concepts and real-world applications.

This textbook is an indispensable resource for undergraduate and graduate students in physics and engineering, particularly those preparing for advanced studies or careers in semiconductor technology. It is a practical, pedagogically refined resource for both coursework and self-study.  Key Features:

- Comprehensive yet concise coverage of core principles and advanced topics

- Systematic and didactic presentation of the needed concepts in statistical physics (such as the “Fermi level”).

- Clear explanations of challenging concepts, supported by illustrative examples.

- Research-connected problems linking theory to real-world applications.

- Deeper focus on semiconductor growth and defects than typical introductory texts.

Zielgruppe

Postgraduate and Undergraduate Advanced

Autoren/Hrsg.

Vilao, Rui

Vilão, Rui César

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Technik Allgemein Nanotechnologie

Inhaltsverzeichnis

1. Introduction and Fundamentals 2. Semiconductor Statistics 3. Transport Properties 4. Optical Properties 5. Semiconductor Junctions 6. Nanostructures

Über Autor(innen)

Rui César Vilão is Associate Professor at the Department of Physics of the University of Coimbra, as well as researcher of the Center of Physics of the University of Coimbra. He is a researcher in Condensed Matter Physics, working fundamentally in the investigation of the effects of the hydrogen impurity and of point defects in the properties of semiconductors and insulators. He is a co-author of over 70 research articles, essentially in works using positive muons as local probes of semiconductors and insulators, using the technique known as muon spin spectroscopy (µSR).