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V zquez Magnetic Nano- and Microwires

Design, Synthesis, Properties and Applications
1. Auflage 2015
ISBN: 978-0-08-100181-3
Verlag: Elsevier Science & Techn.
Format: EPUB
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

Design, Synthesis, Properties and Applications

E-Book, Englisch, 870 Seiten

Reihe: Woodhead Publishing Series in Electronic and Optical Materials

ISBN: 978-0-08-100181-3
Verlag: Elsevier Science & Techn.
Format: EPUB
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)



Magnetic nanowires and microwires are key tools in the development ofenhanced devices for information technology (memory and data processing) andsensing. Offering the combined characteristics of high density, high speed, andnon-volatility, they facilitate reliable control of the motion of magnetic domainwalls; a key requirement for the development of novel classes of logic and storagedevices. Part One introduces the design and synthesis of magnetic nanowires andmicrowires, reviewing the growth and processing of nanowires and nanowireheterostructures using such methods as sol-gel and electrodepositioncombinations, focused-electron/ion-beam-induced deposition, chemicalvapour transport, quenching and drawing and magnetic interactions. Magneticand transport properties, alongside domain walls, in nano- and microwiresare then explored in Part Two, before Part Three goes on to explore a widerange of applications for magnetic nano- and microwire devices, includingmemory, microwave and electrochemical applications, in addition to thermalspin polarization and configuration, magnetocalorific effects and Bloch pointdynamics. - Detailed coverage of multiple key techniques for the growth and processing of nanowires and microwires - Reviews the principles and difficulties involved in applying magnetic nano- and microwires to a wide range of applications - Combines the expertise of specialists from around the globe to give a broad overview of current and future trends

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List of contributors
J.P. Adam     Université Paris Sud-CNRS, Orsay, France G. Agnus     Université Paris Sud-CNRS, Orsay, France E. Anagnostopoulou     Université de Toulouse, LPCNO UMR5215, INSA, Toulouse, France C. Andreas Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS) and Université de Strasbourg, Strasbourg, France Peter Grünberg Institut (PGI-6), Forschungszentrum Jülich, Jülich, Germany J.P. Araújo     Universidade do Porto, Porto, Portugal G. Badini-Confalonieri     Instituto de Ciencias de Materiales de Madrid, Madrid, Spain L. Baldi     Micron Semiconductor Italia S.r.l., Agrate Brianza (MB), Italy I. Barisik     Université Paris Sud-CNRS, Orsay, France J. Barnas     Adam Mickiewicz University, Poznan, Poland C. Bran     Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, Spain C. Burrowes     Université Paris Sud-CNRS, Orsay, France C. Chappert     Université Paris Sud-CNRS, Orsay, France H. Chiriac     National Institute of Research and Development for Technical Physics, Iasi, Romania A. Chizhik     Basque Country University UPV/EHU, San Sebastian, Spain O. Chubykalo-Fesenko     Instituto de Ciencia de Materiales de Madrid, CSIC, Madrid, Spain R. Cowburn     University of Cambridge, Cambridge, UK R. Córdoba     Universidad de Zaragoza, Zaragoza, Spain L.A.S. de Oliveira     Universidade Federal do Rio de Janeiro, Rio de Janeiro, Brazil J.M. De Teresa Universidad de Zaragoza-CSIC, Zaragoza, Spain Universidad de Zaragoza, Zaragoza, Spain T. Devolder     Université Paris Sud-CNRS, Orsay, France A. Digiacomo Université Paris Sud-CNRS, Orsay, France IMM-CNR, Agrate Brianza (MB), Italy V.K. Dugaev     Rzeszów University of Technology, Rzeszów, Poland A. Dyrda     Adam Mickiewicz University, Poznan, Poland S. Eimer     Université Paris Sud-CNRS, Orsay, France M. El Hadri     Université Paris Sud-CNRS, Orsay, France M. Fanciulli     IMM-CNR, Agrate Brianza (MB), Italy A. Fernández-Pacheco     University of Cambridge, Cambridge, UK O. Fruchart Université Grenoble Alpes, Institut NEEL, Grenoble, France CNRS, Institut NEEL, Grenoble, France J. García     Universidad de Oviedo, Oviedo, Asturias, Spain K. Garcia     Université Paris Sud-CNRS, Orsay, France F. Garcia Sanchez     Université Paris Sud-CNRS, Orsay, France M. Hayashi     National Institute for Materials Science, Tsukuba, Japan B. Hernando     Universidad de Oviedo, Oviedo, Asturias, Spain L. Herrera Diez     Université Paris Sud-CNRS, Orsay, France R. Hertel     Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS) and Université de Strasbourg, Strasbourg, France T. Hingant     Université Paris-Sud, Orsay, France J.K. Hyun     Department of Chemistry and Nano Science, Ewha Womans University, Seoul, South Korea M.R. Ibarra Universidad de Zaragoza-CSIC, Zaragoza, Spain Universidad de Zaragoza, Zaragoza, Spain L. Iglesias     Universidad de Oviedo, Oviedo, Asturias, Spain M. Inglot     Rzeszów University of Technology, Rzeszów, Poland M. Ipatov     University of the Basque Country, UPV/EHU, San Sebastian, Spain Y.P. Ivanov     King Abdullah University of Science and Technology, Thuwal, Saudi Arabia V. Jacques     Université Paris-Sud, Orsay, France S. Jamet Université Grenoble Alpes, Institut NEEL, Grenoble, France CNRS, Institut NEEL, Grenoble, France A. Jiménez     Instituto de Ciencia de Materiales de Madrid, Madrid, Spain B. Kim     Department of Chemistry, KAIST, Daejeon 305-701, Korea J.-V. Kim     Université Paris Sud-CNRS, Orsay, France S. Kim     Department of Chemistry, KAIST, Daejeon 305-701, Korea M. Klaui     Johannes Gutenberg-Universität Mainz, Mainz, Germany L. Kraus     Institute of Physics, Academy of Sciences of the Czech Republic, Prague, Czech Republic L.-M. Lacroix     Université de Toulouse, LPCNO UMR5215, INSA, Toulouse, France A. Lamperti     IMM-CNR, Agrate Brianza (MB), Italy L. Lazzarini     IMM-CNR, Agrate Brianza (MB), Italy H. Lee     Department of Chemistry, KAIST, Daejeon 305-701, Korea W. Lin     Université Paris Sud-CNRS, Orsay, France R. López-Ruiz     Universidade Estadual de Campinas, Campinas, Brazil N. Lupu     National Institute of Research and Development for Technical Physics, Iasi, Romania D.P. Makhnovskiy     University of Plymouth, Plymouth, UK R. Mantovan     IMM-CNR, Agrate Brianza (MB), Italy M. Marianni     IMM-CNR, Agrate Brianza (MB), Italy S. Michalik     UPJS, Kosice, Slovakia I. Minguez-Bacho Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, Spain Nanyang Technological University, Singapore, Singapore K. Nagashima     Osaka University, Osaka, Japan L. Nasi     IMM-CNR, Agrate Brianza (MB), Italy D. Navas     Universidade do Porto, Porto, Portugal B. Ockert     Singulus Technology AG, Kahl am Main, Germany F. Ott     Laboratoire Léon Brillouin CEA/CNRS UMR12, Gif sur Yvette, France T.-A. Óvári     National Institute of Research and Development for Technical Physics, Iasi, Romania I. Panagiotopoulos     Laboratoire Léon Brillouin CEA/CNRS UMR12, Gif sur Yvette, France L.V. Panina National University of Science and Technology, Moscow, Russian Federation Institute for...



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