Tu / Rosenberg Preparation and Properties of Thin Films

Treatise on Materials Science and Technology, Vol. 24
1. Auflage 2013
ISBN: 978-1-4832-1829-8
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 350 Seiten, Web PDF

Treatise on Materials Science and Technology, Volume 24: Preparation and Properties of Thin Films covers the progress made in the preparation of thin films and the corresponding study of their properties. The book discusses the preparation and property correlations in thin film; the variation of microstructure of thin films; and the molecular beam epitaxy of superlattices in thin film. The text also describes the epitaxial growth of silicon structures (thermal-, laser-, and electron-beam-induced); the characterization of grain boundaries in bicrystalline thin films; and the mechanical properties of thin films on substrates. The ion beam modification of thin film; the use of thin alloy films for metallization in microelectronic devices; and the fabrication and physical properties of ultrasmall structures are also encompassed. Materials scientists and materials engineers will find the book invaluable.

Autoren/Hrsg.

Tu, K. N.

Rosenberg, R.

Inhaltsverzeichnis

1;Front Cover;1
2;Preparation and Properties of Thin Films;4
3;Copyright Page;5
4;Table of Contents;6
5;CONTRIBUTORS;10
6;PREFACE;12
7;PART I: INTRODUCTION;14
7.1;Chapter 1. Preparation and Property Correlations in Thin Films;14
8;PART II: VARIATION OF MICROSTRUCTURE OF THIN FILMS;24
8.1;Chapter 2. Molecular Beam Epitaxy of Superlattices in Thin Films;26
8.1.1;I. Introduction;26
8.1.2;II. Molecular Beam Epitaxy;28
8.1.3;III. Structure of Semiconductor Superlattices;33
8.1.4;IV. Properties of Superlattice Structures;49
8.1.5;V. Concluding Remarks;72
8.1.6;References;74
8.2;Chapter 3. Epitaxial Growth of Silicon Structures—Thermal, Laser-, and Electron-Beam-Induced;80
8.2.1;I. Introduction;80
8.2.2;II. Thermal and Laser-Induced Epitaxy: Implanted- Amorphous Silicon;85
8.2.3;III. Deposited Layers of Silicon on Silicon;94
8.2.4;IV. Epitaxial Silicides;105
8.2.5;V. Crystallization of Deposited Films;112
8.2.6;VI. Summary;120
8.2.7;References;121
8.3;Chapter 4. Characterization of Grain Boundaries in Bicrystalline Thin Films;126
8.3.1;I. Introduction;127
8.3.2;II. Structure of Grain Boundaries;129
8.3.3;III. Properties of Grain Boundaries;137
8.3.4;IV. Preparation of Bicrystalline Thin Films;143
8.3.5;V. Characterization of Grain Boundary Structure;147
8.3.6;VI. Recent Experimental Results;156
8.3.7;VII. Summary;169
8.3.8;VIII. Perspective;169
8.3.9;References;170
8.4;Chapter 5. Mechanical Properties of Thin Films on Substrates;176
8.4.1;I. Introduction;177
8.4.2;II. Biaxial Strain Model;178
8.4.3;III. Strain Relaxation Mechanisms;180
8.4.4;IV. Strain Relaxation by Dislocation Glide;184
8.4.5;V. Strain Relaxation by Diffusional Creep;198
8.4.6;VI. Strain at Grain Boundaries;204
8.4.7;VII. Strain and Stress at Film Edges;207
8.4.8;VIII. Microstructures Which Affect Mechanical Properties of Thin Films;216
8.4.9;IX. Application;220
8.4.10;References;222
9;PART III: VARIATION OF COMPOSITION OF THIN FILMS;224
9.1;Chapter 6. Ion Beam Modification of Thin Films;226
9.1.1;I. Introduction;226
9.1.2;II. Range and Energy Deposition;227
9.1.3;III. Sputtering-Induced Compositional Changes;229
9.1.4;IV. Implanted Metastable Phases;234
9.1.5;V lon-Beam-Induced Reactions of Metal Films;241
9.1.6;References;248
9.2;Chapter 7. Thin Alloy Films for Metallization in Microelectronic Devices;250
9.2.1;I. Introduction;250
9.2.2;II. Metallurgical Degradation in Microelectronic Devices;252
9.2.3;III. Near-Equilibrium Multilayered Thin-Film Structure;261
9.2.4;IV. Applications of Thin Alloy Films in Forming Shallow Silicide Contacts;274
9.2.5;V. Conclusion;293
9.2.6;References;294
10;PART IV: VARIATION OF PATTERN OF THIN FILMS;296
10.1;Chapter 8. Fabrication and Physical Properties of Ultrasmall Structures;298
10.1.1;I. Introduction;298
10.1.2;II. Fabrication;299
10.1.3;III. Physical Properties;311
10.1.4;IV. Summary;322
10.1.5;References;323
11;INDEX;326
12;CONTENTS OF PREVIOUS VOLUMES;342