Mid-infrared Optoelectronics

Materials, Devices, and Applications
Erscheinungsjahr 2019
ISBN: 978-0-08-102709-7
Verlag: Elsevier Science & Technology

Buch, Englisch, 750 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 540 g

Reihe: Woodhead Publishing Series in Electronic and Optical Materials

Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting areas of research. Sections cover fundamentals, light sources, photodetectors, new approaches, and the application of mid-IR devices, with sections discussing LEDs, laser diodes, and quantum cascade lasers, mid-infrared optoelectronics, emerging research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the most relevant applications of mid-infrared devices are reviewed in industry, gas sensing, spectroscopy, and imaging.

This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics.

Zielgruppe

Materials Scientists and Engineers in Academia and R&D

Autoren/Hrsg.

Tournié, Eric

Cerutti, Laurent

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Technische Wissenschaften Elektronik | Nachrichtentechnik Nachrichten- und Kommunikationstechnik Optische Nachrichtentechnik
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik

Inhaltsverzeichnis

Part One - Fundamentals

1. The physics of mid-infrared semiconductor materials and heterostructures

Part Two - Light sources

2. Mid-infrared light-emitting diodes

3. Interband mid-infrared lasers

4. Quantum cascade lasers

5. High-brightness quantum cascade lasers

6. Mid-infrared frequency conversion in quasiphase matched semiconductors

Part Three - Photodetectors

7. HgCdTe photodetectors

8. Quantum cascade detectors: A review

9. InAs/GaSb type II superlattices: A developing material system for third generation of IR imaging

10. InAsSb-based photodetectors

Part Four - New approaches

11. Dilute bismide and nitride alloys for mid-IR optoelectronic devices

12. Group IV photonics using (Si)GeSn technology toward mid-IR applications

13. Intersubband transitions in GaN-based heterostructures

14. III-V/Si mid-IR photonic integrated circuits

Part Five - Application of mid-IR devices

15. Quartz-enhanced photoacoustic spectroscopy for gas sensing applications

16. Mid-infrared gas-sensing systems and applications

Über Autor(innen)

Tournié, Eric
Eric Tournié is a professor of electrical engineering and photonics at the University of Montpellier and a senior member of Institut Universitaire de France (IUF).
He is an expert on the epitaxial growth of compound semiconductor heterostructures and devices. His interest has always been the development of new nanostructures for applications in optoelectronic devices.

Cerutti, Laurent
Laurent Cerutti is an Associate Professor at the Université de Montpellier since 2006. He obtained his PhD in 2004 from the Université de Montpellier on the molecular beam epitaxy of Sb-based VCSELs. He spent 2 years at the Polytechnic University of Madrid in the group of the Pr. E. Calleja where he developed the first GaN nanocolumns grown by MBE on Si(100). Since 2006, his research activities focus on the development and the MBE growth of Sb-based photonic devices, mainly for the development of MIR VCSELs, lasers grown on Si and plasmonic structures. He has been involved in several European projects (FP6, FP7, ITN, H2020) and has been involved/coordinated several national projects. He is author or co-author of ~ 100 publications in peer-reviewed journal, conference proceedings and two international patents. In 2016, he was guest editor for the special issue of the Int. Molecular-Beam Epitaxy (MBE) conference in Journal of Crystal Growth.