Theoretical Modeling of Epitaxial Graphene Growth on the Ir(111) Surface

Softcover Nachdruck of the original 1. Auflage 2017
ISBN: 978-3-319-88140-9
Verlag: Springer International Publishing

Buch, Englisch, 182 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 312 g

Reihe: Springer Theses

One possible method of producing high-quality graphene is to grow it epitaxially; this thesis investigates the mechanisms involved in doing so. It describes how the initial stages of growth on the Ir(111) surface are modelled using both rate equations and kinetic Monte Carlo, based upon nudged elastic band (NEB) calculated reaction energy barriers. The results show that the decomposition mechanism involves production of C monomers by breaking the C-C bond.

In turn, the thesis explores the nucleation of carbon clusters on the surface from C monomers prior to graphene formation. Small arch-shaped clusters containing four to six C atoms, which may be key in graphene formation, are predicted to be long-lived on the surface.

In closing, the healing of single vacancy defects in the graphene/Ir(111) surface is investigated, and attempts to heal said defects using ethylene molecules is simulated with molecular dynamics and NEB calculated energy barriers.

Zielgruppe

Research

Autoren/Hrsg.

Tetlow, Holly Alexandra

Fachgebiete

• Technische Wissenschaften Verfahrenstechnik | Chemieingenieurwesen | Biotechnologie Technologie der Oberflächenbeschichtung
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Biomaterialien, Nanomaterialien, Kohlenstoff
• Naturwissenschaften Physik Thermodynamik Oberflächen- und Grenzflächenphysik, Dünne Schichten

Inhaltsverzeichnis

Introduction.- Theoretical Methods.- Producing a Source of Carbon: Hydrocarbon Decomposition.- Hydrocarbon Decomposition: Kinetic Monte Carlo Algorithm.- Thermal Decomposition in Graphene Growth: Kinetic Monte Carlo Results.- Beginnings of Growth: Carbon Cluster Nucleation.- Removing Defects: Healing Single Vacancy Defects.- Final Remarks.