Szweda Diode Laser Materials and Devices - A Worldwide Market and Technology Overview to 2005

1. Auflage 2001
ISBN: 978-0-08-053043-7
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 528 Seiten, Web PDF

This report examines the development of the diode laser industry over a six-year period, 2000 to 2005, incorporating analysis of trends in markets, technologies and industry structure. It is designed to provide key information to users and manufacturers of substrates, epitaxial wafers (epiwafers) and devices. The coverage includes components, laser diodes, and the semiconducting (SC) wafers and epiwafers on which most of these devices are made. The geographical coverage of the report includes North America, Japan and Europe, which together will account for over 90% of the production and consumption of diode laser materials and devices over the next five years. However, many other countries have activities in this field including South-East Asia (Taiwan, South Korea, Singapore, Malaysia etc), China, India, Australia and Eastern Europe (Russia, Poland, Hungary, the Czech Republic) amongst others. Activities in these countries are commented on in the text where relevant, but are not quantified in the market data. Chapter 1 is an introduction to the market study. Chapter 2 contains an executive summary. Chapter 3 overviews materials markets. The size, quality, and particularly the price, of substrates and wafers are key factors in determining the ability of companies to produce competitive laser products. Chapter 3 also examines trends in materials technologies for laser diodes, the impact of the device markets on wafer demand, and the main suppliers. This chapter introduces the semiconductor materials that are presently or will likely become important to the fabrication of diode laser devices. The principal distinguishing properties of these materials are explained with reference to their application. Chapter 4 chapter examines the basic application sectors for laser diode devices as well as the basic commercial opportunities, changes and forces acting within each sector. The chapter also examines the market for the basic types of device as well as the promising newer types. For each type of device, market data and forecasts are provided and future prospects described. The application data are presented for the following industrial groups: • Automotive • Computers • Consumer • Industrial • Military and Aerospace • Telecommunications • Others A full 5-year forecast and analysis is provided by application and region. Chapter 5 is a technology overview. In this chapter a background and overview of developments in the principal technological R&D and production processes for devices is provided. The main focus is on the most important enabling technology for the production of the present and future generations of laser diodes and related devices. This process is crystal growth and involves the following sequence: • Bulk growth of single crystals • Epitaxial growth of semiconductor single crystal layers • Ion implantation • Device fabrication, ie gate and contact formation, etc • Packaging & test Chapter 6 profiles substrate suppliers, epiwafers suppliers and merchant and captive producers of GaAs devices. Chapter 7 lists universities and selected industrial labs involved in the areas of diode laser research. Chapter 8 is a directory of suppliers. Chapter 9 provides acronyms and exchange rates. For a PDF version of the report please call Tina Enright on [phone] for price details.

Autoren/Hrsg.

Szweda, R.

Inhaltsverzeichnis

1;Front Cover;1
2;Diode laser Materials & Devices: A Worldwide Market & Technology Overview to 2005;2
3;Copyright Page ;3
4;Contents;4
5;List of Tables;10
6;List of Figures;14
7;Chapter 1. Introduction;18
7.1;1.1 Report Structure;18
7.2;1.2 Products;19
7.3;1.3 Markets;20
7.4;1.4 Regions;20
7.5;1.5 Research Background;20
8;Chapter 2. Executive Summary;22
8.1;2.1 Introduction;22
8.2;2.2 Diode Laser Substrate Markets;25
8.3;2.3 Diode Laser Epitaxial Wafer Markets;27
8.4;2.4 Diode Laser Device Market by Application;30
8.5;2.5 Diode Laser Application Market Forecast;33
8.6;2.6 Market by Application Sector;36
9;Chapter 3. Diode Laser Materials Markets;42
9.1;3.1 Forecast Summary;42
9.2;3.2 Introduction;42
9.3;3.3 The World Market For Substrates 2000–05;45
9.4;3.4 World Substrate Supplier Situation;59
9.5;3.5 Merchant GaAs Epiwafer Markets;60
10;Chapter 4. Application Market Overview;84
10.1;4.1 Introduction;84
10.2;4.2 Diode Lasers in the Total Laser Marketplace;86
10.3;4.3 Worldwide Market for Diode Lasers;86
10.4;4.4 The Worldwide Diode Laser Business;88
10.5;4.5 Telecommunications Markets for Diode Lasers;98
10.6;4.6 Consumer Markets for Diode Lasers;121
10.7;4.7 Computer Markets for Diode Lasers;132
10.8;4.8 Industrial Markets for Diode Lasers;142
10.9;4.9 Military/Aerospace Markets for Devices;157
10.10;4.10 Automotive Markets for Devices;163
10.11;4.11 Other Markets for Diode Lasers;170
11;Chapter 5. Technology Overview;174
11.1;5.1 Introduction;174
11.2;5.2 Crystal Growth;176
11.3;5.3 Crystal Growth Technologies;178
11.4;5.4 Substrates;184
11.5;5.5 Epitaxial Growth;190
11.6;5.6 In Situ Monitoring;209
11.7;5.7 Device Processing;213
12;Chapter 6. Company Profiles;224
12.1;6.1 Introduction;224
12.2;6.2 Agere Systems;225
12.3;6.3 Agilent Technologies;229
12.4;6.4 AIXTRON;231
12.5;6.5 Alcatel Optronics;235
12.6;6.6 Alfalight;238
12.7;6.7 American Xtal Technology;239
12.8;6.8 ATMI Epitaxial Services;243
12.9;6.9 Coherent;246
12.10;6.10 Cree Inc;249
12.11;6.11 E20 Communications;251
12.12;6.12 Eastman Kodak;252
12.13;6.13 EMCORE;253
12.14;6.14 Epichem;256
12.15;6.15 Excelight;258
12.16;6.16 Freiberger Compound Materials;261
12.17;6.17 Fujitsu;262
12.18;6.18 Furukawa;265
12.19;6.19 Hamamatsu;268
12.20;6.20 Hitachi;270
12.21;6.21 Honeywell;272
12.22;6.22 Infineon;274
12.23;6.23 IQE;277
12.24;6.24 Japan Energy;280
12.25;6.25 JDS Uniphase;281
12.26;6.26 Matsushita;285
12.27;6.27 Mitsubishi;289
12.28;6.28 NEC;292
12.29;6.29 Nichia;296
12.30;6.30 Nortel;298
12.31;6.31 Oki;301
12.32;6.32 PerkinElmer;303
12.33;6.33 Picogiga;305
12.34;6.34 Princeton Lightwave;306
12.35;6.35 RIBER;308
12.36;6.36 ROHM;310
12.37;6.37 Sanyo;314
12.38;6.38 Sharp;317
12.39;6.39 Sony;320
12.40;6.40 Spectra-Physics;323
12.41;6.41 Thales Optics;327
12.42;6.42 ThermoVG Semicon;330
12.43;6.43 Toshiba;332
12.44;6.44 Toyoda Gosei;334
12.45;6.45 Xerox;336
12.46;6.46 Zarlink Semiconductor;338
13;Chapter 7. Geographical List of Universities and Selected Industrial Labs;342
13.1;7.1 Introduction;342
13.2;7.2 Australia;343
13.3;7.3 Belgium;345
13.4;7.4 Canada;345
13.5;7.5 China;347
13.6;7.6 Finland;348
13.7;7.7 France;349
13.8;7.8 Germany;352
13.9;7.9 Greece;359
13.10;7.10 India;359
13.11;7.11 Ireland;359
13.12;7.12 Italy;360
13.13;7.13 Japan;361
13.14;7.14 Korea;371
13.15;7.15 The Netherlands;374
13.16;7.16 Poland;375
13.17;7.17 Russia;376
13.18;7.18 Singapore;377
13.19;7.19 South Africa;378
13.20;7.20 Spain;378
13.21;7.21 Sweden;379
13.22;7.22 Switzerland;380
13.23;7.23 Taiwan;381
13.24;7.24 Tunisia;383
13.25;7.25 UK;383
13.26;7.26 USA;392
14;Chapter 8. Directory of Leading Suppliers;416
15;Chapter 9. Appendices;528
15.1;9.1 Exchange Rates;528
15.2;9.2 Mergers and Acquisitions;529
15.3;9.3 Joint Ventures and Agreements;531
15.4;9.4 Alphabetical List of Acronyms;534
16;Erratum;546