Field-effect Self-mixing Terahertz Detectors

Softcover Nachdruck of the original 1. Auflage 2016
ISBN: 978-3-662-56948-1
Verlag: Springer

Buch, Englisch, 126 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 454 g

Reihe: Springer Theses

A comprehensive device model considering both spatial
distributions of the terahertz field and the field-effect self-mixing factor
has been constructed for the first time in the thesis. The author has found
that it is the strongly localized terahertz field induced in a small fraction
of the gated electron channel that plays an important role in the high
responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a
2-micron-sized gate and integrated dipole antennas has been developed and can
offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further
reducing the gate length down to 0.2 micron, a noise-equivalent power of 6
pW/Hz1/2 has been achieved. This thesis provides detailed experimental
techniques anddevice simulation for revealing the self-mixing mechanism
including a scanning probe technique for evaluating the effectiveness of
terahertz antennas. As such, the thesis could be served as a valuable
introduction towards further development of high-sensitivity field-effect terahertz
detectors for practical applications.

Zielgruppe

Research

Autoren/Hrsg.

Sun, Jiandong

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Technische Wissenschaften Elektronik | Nachrichtentechnik Nachrichten- und Kommunikationstechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikrowellentechnik

Inhaltsverzeichnis

Introduction.- Field-Effect Self-Mixing Mechanism and Detector Model.- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT.- Realization of Resonant Plasmon Excitation and Detection.- Scanning Near-Field Probe for Antenna Characterization.- Applications.- Conclusions and Outlook.