Stella / Miglio Semiconductor Superlattices and Interfaces

Proceedings of the International School of Physics «Enrico Fermi»
1. Auflage 2013
ISBN: 978-1-4832-9036-2
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band Volume 117, 496 Seiten, Web PDF

Reihe: Enrico Fermi International School of Physics

This book is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications. The papers deal with the interaction of theory, experiments and applications within the field, and the outstanding contributions are from both the academic and industrial worlds.

Autoren/Hrsg.

Stella, A.

Miglio, L.

Inhaltsverzeichnis

1;Front Cover;1
2;Semiconductor Superlattices and Interfaces;3
3;Copyright Page;4
4;Table of Contents;5
5;Preface;13
6;Chapter 1. The evolution of semiconductor quantum structures. Do-it-yourself quantum mechamics;19
6.1;1. Introduction;19
6.2;2. Epitaxy and superlattice growth;23
6.3;3. Resonant tunneling in an electric field;24
6.4;4. Transport and optical properties in superlattices and quantum wells subject to an applied electric field;27
6.5;5. Conclusion;38
7;Chapter 2. Physics and engineering of heterojunction band lineups;43
7.1;1. Introduction: from bandgap science to bandgap engineering;43
7.2;2. Internal photoemission: a new weapon in today's experimental arsenal for studying heterojunction band lineups;45
7.3;3. Heterojunction band lineup control: empirical considerations ;49
7.4;4. Practical cases of band lineup control ;50
7.5;5. Future avenues ;53
8;Chapter 3. Theoretical models on the formation of semiconductor interface barriers;57
8.1;1. Introduction;57
8.2;2. Metal-semiconductor interfaces;58
8.3;3. Semiconductor-semiconductor interfaces;69
8.4;4. Conclusions;73
9;Chapter 4. Semiconductor interfaces;77
9.1;1. Introduction;77
9.2;2. Isovalent substitutions;80
9.3;3. Heterovalent substitutions;85
9.4;4. Band offsets and linear-response scheme;87
9.5;5. Heterovalent intralayers: interface dipoles;94
9.6;6. Conclusions;101
10;Chapter 5. The strain release in mismatched semiconductor heterostructures;105
10.1;1. Introduction;105
10.2;2. Formalism and results of the elasticity theory;106
10.3;3. Critical-thickness theories;109
10.4;4. Experimental techniques;114
10.5;5. Experimental results and discussion;116
11;Chapter 6. Optical investigation of interfaces;123
11.1;1. Introduction;123
11.2;2. Si-electrolyte and Si-Si02 interface;123
11.3;3. Thick epitaxial Si layers;129
11.4;4. Highly doped Si layers;133
12;Chapter 7. Optical properties of silicides;141
12.1;1. Introduction;141
12.2;2. Chemical bond and electronic states in silicides;143
12.3;3. Optical properties of transition metal silicides pag;149
13;Chapter 8. Quantum size effect in low-dimensional semiconductors;175
13.1;1. Theoretical aspects;175
13.2;2. Fabrication of quantum wires and quantum dots;177
13.3;3. Main experiments;179
14;Chapter 9. Relaxation dynamics in GaAs/ZAlx.Ga1_x.As quantum well heterostructures;187
14.1;1. Introduction;187
14.2;2. Experimental;189
14.3;3. Samples;190
14.4;4. Carrier recombination in GaAs/Al0.3 Ga0.7As quantum wells;190
14.5;5. Tunnelling in ADQW structures;198
14.6;6. Summary;202
15;Chapter 10. Excitons and polaritons in quantum wells;205
15.1;1. Introduction;205
15.2;2. Excitons in semiconductors;207
15.3;3. Exciton-polariton states;209
15.4;4. Excitons in quantum wells;213
15.5;5. Quantum well polaritons;219
15.6;6. Extension to quantum wires and quantum dots;230
16;Chapter 11. Envelope function approach to electronic states in heterostructures;235
16.1;1. Introduction;235
16.2;2. Envelope function description of electronic states;236
16.3;3. Examples of results for some systems;245
16.4;4. External magnetic fields;251
16.5;5. Excitons in quantum wells;255
17;Chapter 12. Ab initio calculation of phonon spectra in semiconductors: from pure crystals to alloys and superlattices;261
17.1;1. Introduction;261
17.2;2. Theoretical framework and computational techniques;266
17.3;3. Some results for pure crystals;272
17.4;4. Phonons in semiconductor alloys;275
17.5;5. Vibrational properties of GaAs/AlAs superlattices;285
17.6;6. Summary and outlook;292
18;Chapter 13. Compositional disorder in AlGaAs superlattices: bond charge model calculations of vibrational features and optical spectra;297
18.1;1. Introduction;297
18.2;2. Outline of the computational model and related techniques;299
18.3;3. Vibrational properties of GaAs and AlAs mixtures;309
18.4;4. Order-disorder interplay;319
19;Chapter 14. Interaction of light with «folded» acoustic waves in semiconductor superlattices;331
19.1;1. Introduction;331
19.2;2. Salient features of superlattice phonon modes;331
19.3;3. Experimental determination of the FLA dispersion curves;333
19.4;4. Intensity of the FLA peaks;337
19.5;5. Effects of the acoustic attenuation and optical absorption;338
19.6;6. Disorder and intermixing effects on the «acoustic» phonons;343
19.7;7. Conclusion;348
20;Chapter 15. Photoreflectance study of GaAs/AlxGa1-xAs single quantum well and strained InxGa1As/GxAs superlattices;351
20.1;1. Introduction;351
20.2;2. Experiment;352
20.3;3. Line shape analysis;353
20.4;4. Single quantum wells in GaAs/AlxGa1-xAs;355
20.5;5. Strained InxGa1-xAs/GaAs superlattices;362
21;Chapter 16. Wannier-Stark quantization in semiconductor superlattices: physics and applications;369
21.1;1. Introduction;369
21.2;2. Theoretical aspects;370
21.3;3. Experimental results;374
21.4;4. Electro-optical applications;379
21.5;5. Conclusion;381
22;Chapter 17. Thermal and thermo-electric transport properties of quantum point contacts;383
22.1;1. Introduction;383
22.2;2. Theoretical background;384
22.3;3. Experiments;388
22.4;4. Conclusions;394
22.5;Appendix;394
23;Chapter 18. Band structure engineering and its device applications;397
23.1;1. Introduction;397
23.2;2. Abrupt heterointerfaces as launching ramps: ballistic devices;398
23.3;3. Bandgap grading;401
23.4;4. Abrupt heterointerfaces as electronic mirrors: quantum devices;404
23.5;5. Ultimate bandgap engineering: tunable discontinuities;410
23.6;6. Nonlinear optical properties of coupled-quantum-well molecules;411
24;Chapter 19. The physics of nanofabrication;417
24.1;1. Introduction;417
24.2;2. Pattern definition and pattern transfer;417
24.3;3. Resolution of the pattern definition step;417
24.4;4. Photolithography;418
24.5;5. Electron beam lithography;419
24.6;6. Ion beam lithography;421
24.7;7. Pattern transfer—additive processing;421
24.8;8. Etching;422
24.9;9. Dry-etching damage;424
24.10;10. Conclusions;426
25;Chapter 20. Molecular-beam epitaxy of advanced structures based on III-V compounds;429
25.1;1. Introduction;429
25.2;2. Fundamentals of the MBE growth process;430
25.3;3. Technology of MBE;434
25.4;4. MBE growth fronts and interfaces;437
25.5;5. Epitaxial structures;439
25.6;6. Conclusions;446
26;Chapter 21. Problems in optical properties of semiconductors and their solutions;453
26.1;1. Introduction;453
26.2;2. Plasmons, carrier effective masses;454
26.3;3. Symmetry effects;459
26.4;4. Phonons in bulk crystals and superlattices;465
26.5;5. Coupling mechanisms in Raman scattering by phonons;468
26.6;6. Surface excitations;474
26.7;7. Stress and strain effects;479
26.8;8. Impurities, isotopic disorder;481
26.9;9. Widths and self-energies of excitons;486