E-Book, Englisch, Band 215, 1299 Seiten, eBook
Sharma / Rawal The Physics of Semiconductor Devices
1. Auflage 2019
ISBN: 978-3-319-97604-4
Verlag: Springer International Publishing
Format: PDF
Kopierschutz: 1 - PDF Watermark
Proceedings of IWPSD 2017
E-Book, Englisch, Band 215, 1299 Seiten, eBook
Reihe: Springer Proceedings in Physics
ISBN: 978-3-319-97604-4
Verlag: Springer International Publishing
Format: PDF
Kopierschutz: 1 - PDF Watermark
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Weitere Infos & Material
Enhanced Photodetection in Visible Region in rGo/GaN Based Hybrid Photodetector.- ZigZag Phosphorene Nanoribbons Antidot – Electronic structure and Device Application.- Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs.- Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION.- Effects of chemical functionalization on single-walled carbon nanotubes by mild hydrogen peroxide for PV applications.- Effect of tip induced strain on nanoscale electrical properties of MoS2-Graphene heterojunctions.- Optimization of the concentration of molybdenum disulfide (MoS2) for formation of atomically thin layers.- Fabrication of 2D NEMS on flexible substrates for strain engineering in sensing applications.- Transition metal doped ZnS monolayer: The first principles insights.- Tuning Resonant Wavelength of Silicon Micro-ring Resonator with Graphene.- Diameter Dependent Band Gap Properties of Different Structures of Single-walled Carbon.-Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors.