Buch, Englisch, Band 23, 200 Seiten, Format (B × H): 148 mm x 210 mm
Reihe: Science for Systems
Buch, Englisch, Band 23, 200 Seiten, Format (B × H): 148 mm x 210 mm
Reihe: Science for Systems
ISBN: 978-3-8396-0985-9
Verlag: Fraunhofer Verlag
In recent years, monolithic integrated power amplifiers based on gallium nitride (GaN) have become an ideal candidate to meet the increasing demand for high solid-state power levels of today's and future millimeter-wave (mm-wave) systems. The heterostructure aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistor devices outperform comparable state-of-the-art semiconductor technologies due to their superior fundamental properties regarding high-power and high-frequency applications. Therefore, a 100 nm AlGaN/GaN technology was developed by the Fraunhofer IAF which is intended for the realization of high-frequency transistors as well as high-power amplifiers for mm-wave frequency applications. The computer-aided design of such power amplifiers requires a scalable nonlinear model of the active transistor devices. Thereby, the nonlinear model must be capable to take low-frequency dispersion and memory effects into account, which are present in the considered mm-wave GaN technology. An elegant way to describe such dispersive devices is a state-space modeling approach. Therefore, this thesis addresses the development of a scalable state-space transistor model and its verification and applicability in terms of the design of two power amplifiers, a broadband and a high-power amplifier.
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Leistungselektronik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
