Buch, Englisch, Band 13, 345 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 546 g
Materials Science and Technology
Buch, Englisch, Band 13, 345 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 546 g
Reihe: Springer Series in Materials Science
ISBN: 978-3-642-74725-0
Verlag: Springer
The summer school on "Silicon: Materials Science and Technology" was held at the Ettore Majorana Centre for Scientific Culture in Erice, Sicily. It was the 16th course of a series in the International School of Materials Science and Technology. The course attracted participants from all over the world. 30 lectures were presented by internationally reputed experts in the field. The proceedings include all the lecture topics of the course. Short notes on the scientific work of the attendees are integrated with the main papers. The semiconductor material silicon is of paramount importance in micro electronics. The various aspects of the silicon materials science and its technol ogy were critically reviewed and the forseeable future developments of devices and integrated circuits were discussed during the two weeks of the course. The topics ranged from the fundamental physics to the applied science of processing technology and device fabrication covering crystal growth, processing technol ogy, defects, measurement methods, thin films, and device problems. The course brought together theoretical and experimental physicists and engineers from universities, research institutes and industry. The unique setting of the Ettore Majorana Centre in the ancient town of Erice created a friendly atmosphere for fruitful scientific exchange. Long dis cussions continued over lunch and only ended late at night in the wine cellar of the school.
Zielgruppe
Research
Autoren/Hrsg.
Weitere Infos & Material
I Crystal Growth.- Czochralski Growth of Silicon.- Chemical and Physical Considerations in the Chemical Vapor Deposition Process.- Silicon Molecular Beam Epitaxy (Si-MBE).- II Processing.- Simulation of Silicon Processing.- Simulation of Laser-Assisted Doping of Silicon — The Temperature Distribution.- Ion Implantation.- Low Temperature Epitaxial Crystallization of Amorphous Si by Ion-Beam Irradiation.- On the Generation of Ripples on Silicon.- III Defects.- Theory of Defects in Crystalline Silicon.- Defects in CZ Silicon.- Tellurium Related Deep Traps in Silicon.- IV Characterization Methods.- High Resolution Electron Microscopy of Defects in Silicon.- Tunneling Microscopy and Surface Analysis.- Scanning Minority Carrier Transient Spectroscopy: A Method to Investigate the Lateral Distribution of Defects in Semiconductors.- Optical Characterization of Silicon Materials and Structures.- Oxygen-Free Silicon; How Does IR See It?.- V Insulating Films.- Characterization of the SiO2-Si Interface.- Advanced Silicon on Insulator Materials: Processing, Characterization and Devices.- VI Silicide Films.- Properties of Transition Metal Silicides.- State Density Gap in Ti-Silicide/p-Si/p+Si Schottky Barriers.- Morphology and Structure of Thin TiSi2 Films on Silicon.- Modelling Diffusion in Silicides.- VII Devices.- 4 Mbit Technology.- Technology and Reliability Problems of Trench Cell Capacitors.- Heavy Doping Effects and Their Influence on Silicon Bipolar Transistors.- Ionizing Radiation Effects in MOS Devices.- Crystalline Silicon Solar Cells.- Index of Contributors.
