Buch, Englisch, 225 Seiten, Format (B × H): 170 mm x 244 mm, Gewicht: 422 g
Buch, Englisch, 225 Seiten, Format (B × H): 170 mm x 244 mm, Gewicht: 422 g
Reihe: Computational Microelectronics
ISBN: 978-3-7091-7368-8
Verlag: Springer
This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
1 Introduction.- 2 Charge Transport in the Volume.- 3 General Electronic Model of the Interface.- 4 Charge Transport Across the Interface.- 5 Semiconductor-Insulator Interface.- 6 Metal-Semiconductor Contact.- 7 Semiconductor Heterojunction.- 8 MOSFET Gate.- 9 Discretization.- Appendices.- A Transformation of k-Vectors.- B Conservation of Transverse Momentum.- D Approximation of Surface Mobility.- Bibliography 209 Index.




