Schmidt Lateral Alignment of Epitaxial Quantum Dots

1. Auflage 2007
ISBN: 978-3-540-46936-0
Verlag: Springer Berlin Heidelberg
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 707 Seiten

Reihe: NanoScience and Technology

This book describes the full range of possible strategies for laterally aligning self-assembled quantum dots on a substrate surface, beginning with pure self-ordering mechanisms and culminating with forced alignment by lithographic positioning. The text addresses both short- and long-range ordering phenomena and introduces future high integration of single quantum dot devices on a single chip. Contributions by well-known experts ensure that all relevant quantum-dot heterostructures are elucidated from diverse perspectives.

The author was awarded the Philip-Morris Research Award in 2002.

Autoren/Hrsg.

Schmidt, Oliver

Schmidt, Oliver G.

Inhaltsverzeichnis

1;Introduction;6
2;Contents;8
3;List of Contributors;12
4;Lateral Self-Alignment;17
4.1;General;18
4.1.1;1 Physical Mechanisms of Self-Organized Formation of Quantum Dots;19
4.1.2;2 Routes toward Lateral Self-Organization of Quantum Dots: the Model System SiGe on Si( 001);63
4.2;Compact Lateral Quantum Dot Configurations;91
4.2.1;3 Short-Range Lateral Ordering of GeSi Quantum Dots Due to Elastic Interactions;92
4.2.2;4 Hierarchical Self-Assembly of Lateral Quantum- Dot Molecules Around Nanoholes;115
4.3;Ordering in Single Layers;137
4.3.1;5 Energetics and Kinetics of Self-Organized Structure Formation in Solution Growth: the SiGe/ Si System;138
4.3.2;6 Ge Quantum Dot Self-Alignment on Vicinal Substrates;205
4.3.3;7 Lateral Arrangement of Ge Self-Assembled Quantum Dots on a Partially Relaxed SixGe1 x Buffer Layer;219
4.3.4;8 Ordering of Wires and Self-Assembled Dots on Vicinal Si and GaAs ( 110) Cleavage Planes;239
4.4;Ordering by Layer Stacking;254
4.4.1;9 Stacking and Ordering in Self-Organized Quantum Dot Multilayer Structures;255
4.4.2;10 Self-Organized Anisotropic Strain Engineering for Lateral Quantum Dot Ordering;312
4.4.3;11 Towards Quantum Dot Crystals via Multilayer Stacking on Different Indexed Surfaces;331
5;Forced Alignment;352
5.1;Growth on Shallow Modulated Surfaces;353
5.1.1;12 One-, Two-, and Three-Dimensionally Ordered GeSi Islands Grown on Prepatterned Si ( 001) Substrates;355
5.1.2;13 Ordered SiGe Island Arrays: Long Range Material Distribution and Possible Device Applications;375
5.1.3;14 Nanoscale Lateral Control of Ge Quantum Dot Nucleation Sites on Si( 001) Using Focused Ion Beam Implantation;399
5.1.4;15 Ge Nanodroplets Self-Assembly on Focused Ion Beam Patterned Substrates;430
5.1.5;16 Metallization and Oxidation Templating of Surfaces for Directed Island Assembly;442
5.1.6;17 Site Control and Selective-Area Growth Techniques of InAs Quantum Dots with High Density and High Uniformity;463
5.1.7;18 In(Ga)As Quantum Dot Crystals on Patterned GaAs( 001) Substrates;489
5.2;Growth on Surface Modulations of High Amplitude;512
5.2.1;19 Directed Arrangement of Ge Quantum Dots on Si Mesas by Selective Epitaxial Growth;514
5.2.2;20 Directed Self-Assembly of Quantum Dots by Local- Chemical- Potential Control via Strain Engineering on Patterned Substrates;521
5.2.3;21 Structural and Luminescence Properties of Ordered Ge Islands on Patterned Substrates;538
5.2.4;22 Formation of Si and Ge Nanostructures at Given Positions by Using Surface Microscopy and Ultrathin SiO2 Film Technology;563
5.2.5;23 Pyramidal Quantum Dots Grown by Organometallic Chemical Vapor Deposition on Patterned Substrates;584
5.2.6;24 Large-Scale Integration of Quantum Dot Devices on MBE- Based Quantum Wire Networks;632
5.2.7;25 GaAs and InGaAs Position-Controlled Quantum Dots Fabricated by Selective- Area Metalloorganic Vapor Phase Epitaxy;658
5.2.8;26 Spatial InAs Quantum Dot Positioning in GaAs Microdisk and Posts;684