Scheel / Capper Crystal Growth Technology

From Fundamentals and Simulation to Large-scale Production
1. Auflage 2011
ISBN: 978-3-527-62345-7
Verlag: Wiley-VCH
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 505 Seiten, E-Book

In this book top experts treat general thermodynamic aspects of crystal fabrication; numerical simulation of industrial growth processes; commercial production of bulk silicon, compound semiconductors, scintillation and oxide crystals; X-ray characterization; and crystal machining. Also, the role of crystal technology for renewable energy and for saving energy is discussed. It will be useful for scientists and engineers involved in crystal and epilayer fabrication as well as for teachers and graduate students in material science, chemical and metallurgical engineering, and micro- and optoelectronics, including nanotechnology.

Autoren/Hrsg.

Scheel, Hans J.

Capper, Peter

Inhaltsverzeichnis

GENERAL ASPECTS OF CRYSTAL GROWTH TECHNOLOGY

Equilibrium thermodynamics and phase diagrams in crystal production processes

Equilibrium thermodynamics fundamentals of crystal production processes

Thermodynamics, origin and characterisation of defects

Thermophysical properties of crystal growth melts

SIMULATION OF INDUSTRIAL GROWTH PROCESSES

Thermal modeling and experimental studies for the development of the industrial growth of compound semiconductors by the vertical gradient freeze technique

Modelling of Czochralski growth of large Si crystals in industrial systems with and without magnetic fields

Global analysis of effects of magnetic field configuration on melt-crystal interface shape and melt flow in CZ-Si crystal growth

Modelling analysis of VCz growth of GaAs bulk crystals and other low-gradient crystal pulling

COMPOUND SEMICONDUCTORS

GaAs growth technology

Diameter control and interface shape stability in Czochralski Growth

Use of forced mixing via the accelerated crucible rotation technique (ACRT) in the Bridgman growth of cadmium mercury telluride (CMT)

Ga1-xInxSb single crystal growth using the vertical Bridgman technique with accelerated crucible rotation

X-ray characterisation of industrial crystals

SCINTILLATOR CRYSTALS

Continuous growth of large halide scintillation crystals

OXIDES

Growth of langasite-type crystals and their device properties

Flame-fusion (Verneuil) growth of oxides

CRYSTAL GROWTH FOR SUSTAINING ENERGY

Crystal growth technology (CGT) for energy: saving energy and renewable energy

CRYSTAL MACHINING

Crystal sawing technology

Plasma chemical vaporization machining and elastic emission machining

GENERAL ASPECTS OF CRYSTAL GROWTH TECHNOLOGY

Phase Diagrams for Crystal Growth

Fundamentals of Equilibrium Thermodynamics

Thermodynamics, Origin, and Control of Defects

Thermophysical Properties of Molten Silicon

SIMULATION OF INDUSTRIAL GROWTH PROCESSES

Yield Improvement and Defect Control in Bridgman-Type Crystal Growth with the Aid of Thermal Modeling

Modelling of Czochralski Growth of Large Silicon Crystals

Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in Cz-Si Crystal Growth

Modeling of Semitransparent Bulk Crystal Growth

COMPOUND SEMICONDUCTORS

Recent Progress in GaAs Growth Technologies at FREIBERGER

Interface Stability and Its Impact on Control Dynamics

Use of Forced Mixing via the Accelerated Crucible Rotation Technique (ACRT) in Bridgman Growth of Cadmium Mercury Telluride (CMT)

Crystal-Growth Technology for Ternary III-IV Semiconductor Production by Vertical Bridgman and Vertical Gradient Freezing Methods with Accelerated Crucible Rotation Technique

X-Ray Diffraction Imaging of Industrial Crystals

SCINTILLATOR CRYSTALS

Continuous Growth of Large Halide Scintillation Crystals

OXIDES

Phase Equilibria and Growth of Langasite-Type Crystals

Flame-Fusion (Verneuil) Growth of Oxides

CRYSTAL GROWTH FOR SUSTAINING ENERGY

Saving Energy and Renewable Energy Through Crystal Growth Technology

CRYSTAL MACHINING

Crystal Sawing Technology

Plasma Chemical Vaporization Machining and Elastic Emission Machining

Über Autor(innen)

Professor Hans J. Scheel started the Scheel Consulting company in 2001 after retiring from the Swiss Federal Institute of Technology. Starting out with a chemical background, he has more than 40 years of experience with crystal growth and epitaxy in university as well as industry. For his achievements in bulk crystal growth and epitaxy technologies, he received awards from IBM and from Swiss, British, Korean Crystal Growth Associations, was elected member of the Russian Academy of Engineering Sciences, and received his D.Sc. from Tohoku University, Japan. He is co-author and editor of 6 books, author of more than 100 publications and patents, has organized international workshops on crystal technology and has been visiting professor at Osaka and Tohoku Universities, Japan, as well as Shandong University, China.

 

Dr. Peter Capper is a Materials Team Leader at SELEX Sensors and Airborne Systems Infrared Ltd (formerly BAE Systems), and has over 30 years of experience in the infrared material Cadmium Mercury Telluride (CMT). He holds the patent for the application of the accelerated crucible rotation technique to CMT growth and is recognised as a world authority on CMT. He has written and edited 6 books on electronic materials and devices. He has served on several International Advisory boards to conferences, acted as co-Chair at an E-MRS Symposium and a SPIE Symposium and has edited several conference proceedings for J. Crystal Growth and J. Materials Science. He is also currently on the editorial board of the Journal of Materials Science: Materials in Electronics.