Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System

2014
ISBN: 978-4-431-54794-5
Verlag: Springer Japan

Buch, Englisch, 40 Seiten, Book w. online files / update, Format (B × H): 155 mm x 235 mm, Gewicht: 949 g

Reihe: SpringerBriefs in Applied Sciences and Technology

This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described.

Zielgruppe

Research

Autoren/Hrsg.

Samukawa, Seiji

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik Fertigungstechnik

Inhaltsverzeichnis

Introduction.- On-wafer UV sensor and prediction of UV irradiation damage.- Prediction of Abnormal Etching Profiles in High-aspect-ratio Via/Hole Etching Using On-wafer Monitoring System.- Feature Profile Evolution in Plasma Processing Using Wireless On-wafer Monitoring System.

Über Autor(innen)

Prof. Seiji Samukawa
Distinguished Professor in Tohoku University
Professor in Institute of Fluid Science,
Professor and Principal Investigator, WPI-AIMR in Tohoku University.