Arbitrary Modeling of TSVs for 3D Integrated Circuits

2015
ISBN: 978-3-319-07610-2
Verlag: Springer International Publishing

Buch, Englisch, 179 Seiten, HC gerader Rücken kaschiert, Format (B × H): 160 mm x 241 mm, Gewicht: 4144 g

Reihe: Analog Circuits and Signal Processing

This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor and inductive-based communication system and bandpass filtering.

Zielgruppe

Research

Autoren/Hrsg.

Salah, Khaled

El-Rouby, Alaa

Ismail, Yehea

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Schaltungsentwurf
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren

Inhaltsverzeichnis

Introduction: Work around Moore’s Law.- 3D/TSV Enabling Technologies.- TSV Modeling and Analysis.- TSV Verification.- TSV Macro-Modeling Framework.- TSV Design Applications: TSV-Based On-Chip Spiral Inductor, TSV-Based On-Chip Wireless Communications and TSV-Based Bandpass Filter.- Imperfection in TSV Modeling.- New Trends in TSV.- TSV Fabrication.- Conclusions.