The MOCVD Challenge

A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition
2. Auflage 2017
ISBN: 978-1-138-11493-7
Verlag: CRC Press

Buch, Englisch, 800 Seiten, Format (B × H): 156 mm x 234 mm, Gewicht: 1191 g

Reihe: Electronic Materials and Devices Series

Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive review covering GaInAsP–InP, GaInAsP–GaAs, and related material for electronic and photonic device applications. These III-V semiconductor compounds have been used to realize the electronic, optoelectronic, and quantum devices that have revolutionized telecommunications. The figure on the back cover gives the energy gap and lattice parameter for the entire compositional range of the binary, ternary, and quaternary combinations of these III-V elements. By understanding the material and learning to control the growth new devices become possible: the front cover shows the world’s first InP/GaInAs superlattice that was fabricated by the author — this has gone on to be the basis of modern quantum devices like quantum cascade lasers and quantum dot infrared photodetectors.

Now in its second edition, this updated and combined volume contains the secrets of MOCVD growth, material optimization, and modern device technology. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization for MOCVD growth. Next, the book examines in detail the specifics of the growth of GaInP(As)-GaAs and GaInAs(P)-InP material systems. It examines MOCVD growth of various III-V heterojunctions and superlattices and discusses electronic and optoelectronic devices realized with this material. Spanning 30 years of research, the book is the definitive resource on MOCVD.

Zielgruppe

Researchers and graduate students in physics, engineering, and materials.

Autoren/Hrsg.

Razeghi, Manijeh

Fachgebiete

• Technische Wissenschaften Technik Allgemein Technische Optik, Lasertechnologie
• Technische Wissenschaften Sonstige Technologien | Angewandte Technik Lasertechnologie, Holographie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde
• Naturwissenschaften Physik Physik Allgemein

Inhaltsverzeichnis

Introduction to Semiconductor Compounds. Growth Technology. In situ Characterization during MOCVD. Ex situ Characterization Techniques. MOCVD Growth of GaAs Layers. Growth and Characterization of the GaInP–GaAs System. Optical Devices. GaAs-Based Lasers. GaAs-Based Heterojunction Electron Devices Grown by MOCVD. Optoelectronic Integrated Circuits (OEICs). InP–InP System: MOCVD Growth, Characterization and Applications. GaInAs–InP System: MOCVD Growth, Characterization and Applications. GaInAsP–InP System: MOCVD Growth, Characterization, and Applications. MOCVD Growth, Characterization and Applications of III–V Semiconductor Strained Heterostructures. MOCVD Growth of III–V Heterojunctions and Superlattices on Silicon Substrates and their Applications. Optoelectronic Devices Based on Quantum Structures. Appendices. Index.

Über Autor(innen)

Manijeh Razeghi is with the Center of Quantum Devices at Northwestern University.