Fefet Devices, Trends, Technology and Applications

1. Auflage 2025
ISBN: 978-1-394-28727-7
Verlag: Wiley

Buch, Englisch, 352 Seiten

FeFET Devices, Trends, Technology and Applications is essential for anyone seeking an in-depth understanding of the latest advancements in ferroelectric devices, as it offers comprehensive insights into research techniques, novel materials, and the historical context of semiconductor development.

This book serves as an encyclopedia of knowledge for state-of-the-art research techniques for the miniaturization of ferroelectric devices. This volume explores characteristics, novel materials used, modifications in device structure, and advancements in model FET devices. Though many devices following Moore’s Law and More-Moore are proposed, a complete history of existing and proposed semiconductor devices is now available here. This resource focuses on developments and research in emerging ferroelectric FET devices and their applications, providing unique coverage of topics covering recent advancements and novel concepts in the field of miniaturized ferroelectric devices.

Autoren/Hrsg.

Raj, Balwinder

Rahi, Shiromani Balmukund

Yadav, Nandakishor

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Biomaterialien, Nanomaterialien, Kohlenstoff
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Sensorik
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise

Über Autor(innen)

Balwinder Raj, PhD, is an associate professor at the National Institute of Technology, Jalandhar, India. He has authored and co-authored five books, 12 book chapters, and over 100 research papers in peer-reviewed national and international journals and conferences. His areas of interest include nanoscale semiconductor device modeling, nanoelectronics and their applications in hardware security, sensors, and circuit design, FinFET-based memory design, low-power very large-scale integrated design, and field programmable gate array implementation.

Shiromani Balmukund Rahi, PhD, is an assistant professor in the School of Information and Communication Technology, Gautam Buddha University, Greater Noida, India. He has published 25 research articles, two conference proceedings, 25 book chapters for various projects, and seven books for reputed internal publishers. He also serves as a reviewer for various national and international journals, conferences, and workshops. His research interests include semiconductor device modeling and simulation, tunnel FETs, NCFETs, and Nanosheet FETs.

Nandakishor Yadav, PhD, is a senior scientist with the Fraunhofer Institute for Photonic Microsystems, Dresden, Germany with over ten years of research and teaching experience. He has published over 50 research articles in peer-reviewed journals and conferences. His research interests include very large-scale interface design, Ferroelectric memory, and peripheral circuit design.