Buch, Englisch, Band 869, 160 Seiten, Format (B × H): 169 mm x 250 mm, Gewicht: 449 g
Reihe: The Springer International Series in Engineering and Computer Science
Buch, Englisch, Band 869, 160 Seiten, Format (B × H): 169 mm x 250 mm, Gewicht: 449 g
Reihe: The Springer International Series in Engineering and Computer Science
ISBN: 978-0-387-28591-7
Verlag: Springer Us
The problem of photodiodes in standard CMOS technology it that they have very limited bandwidth, allowing data rates up to only 50Mbit per second. High-speed Photodiodes in Standard CMOS Technology first analyzes the photodiode behaviour and compares existing solutions to enhance the speed. After this, the book introduces a new and robust electronic equalizer technique that makes data rates of 3Gb/s possible, without changing the manufacturing technology. The application of this technique can be found in short haul fibre communication, optical printed circuit boards, but also photodiodes for laser disks.
Zielgruppe
Scientists, practitioners, students, Analog IC designers
Autoren/Hrsg.
Fachgebiete
- Geisteswissenschaften Design Produktdesign, Industriedesign
- Technische Wissenschaften Sonstige Technologien | Angewandte Technik Angewandte Optik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikrowellentechnik
- Technische Wissenschaften Technik Allgemein Konstruktionslehre und -technik
Weitere Infos & Material
Introduction. Outline. Short range optical interconnection. Why optical interconnection? Characteristics of light. Optical fiber types. High intensity light sources. Photodetectors introduction. High-speed optical receivers in CMOS for [small lambda] = 850 nm-literature overview. CMOS photodiodes for [small lambda] = 850 nm. Introduction. Bandwidth of photodiodes in CMOS. Intrinsic (physical) photodiode bandwidth. Extrinsic (electrical) photodiode bandwidth. Noise in photodiodes. Summary and conclusions. High data-rates with CMOS photodiodes. Introduction. Transimpedance amplifier design. Photodiode selection. Equalizer design. Robustness on spread and temperature. Experimental results. Conclusions. Bulk CMOS photodiodes for [small lambda]= 400 nm. Introduction. Finger nwell/p-substrate diode in adjoined-well technology. Finger n+/nwell/p-substrate diode. Finger n+/p-substrate photodiode in separate-well technology. Finger p+/nwell/p-substrate in adjoined-well technology. p+/nwell photodiode. Conclusion. Polysilicon photodiode. High-speed lateral polydiode. Noise in polysilicon photodiodes. Time domain measurements. Quantum efficiency and sensitivity. Conclusion. CMOS photodiodes: generalized. Introduction. Generalization of CMOS photodiodes. Device layer - photocurrent amplitude. Analog equalization. Summary and Conclusions. Conclusions. Conclusions.