Quay Gallium Nitride Electronics

2008
ISBN: 978-3-540-71892-5
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band 96, 470 Seiten, eBook

Reihe: Springer Series in Materials Science

This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

Zielgruppe

Research

Autoren/Hrsg.

Quay, Rüdiger

Inhaltsverzeichnis

1. Introduction.- 2. III-N Materials and the State of the Art of Devices and Circuits.- 3. Epitaxy for III-N-Based Electronic Devices.- 4. Device Process Technology.- 5. Device Characterization and Modeling.- 6. Circuit Considerations and III-N Examples.- 7. Reliability Aspects and High Temperatures Operation.- 8. Integration, Thermal Managements, and Packaging.- 9. Outlook.

Über Autor(innen)

Rüdiger Quay was born in Köln, Germany, in 1971. He studied physics and economics at the University of Bonn and the RWTH Aachen, where he received his "Diplom" in physics in 1997. In summer 1996 he held a visiting research position at Los Alamos National Laboratory, New Mexico, USA, for his master's thesis. In 1999, he was a visiting researcher at the Beckman Institute, University of Illinois, Urbana Champaign. In 2001 he received the doctoral degree in technical sciences with honors from the Technische Universität Wien, Austria. He has published more than 30 refereed publications and he is one of the authors of the book "Analysis and Simulation of Heterostructure Devices". His scientific interests include RF-semiconductor device and process development, heterostructure device modeling and simulation, and circuit and reliability issues. Rüdiger Quay currently is a research engineer at Fraunhofer Institute for Applied Solid-State Physics (IAF) in Freiburg, Germany, involved in the development and large-signal characterization of high-power and high-speed AlGaN/GaN amplifiers and the development of high-speed InP HBTs for high data rate communication at 80~Gbit/s and beyond.