Perevostchikov / Skoupov Gettering Defects in Semiconductors

1. Auflage 2005
ISBN: 978-3-540-29499-3
Verlag: Springer Berlin Heidelberg
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band 19, 388 Seiten

Reihe: Springer Series in Advanced Microelectronics

Gettering Defects in Semiconductors fulfills three basic purposes: - to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; - to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; - to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid-state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.

Autoren/Hrsg.

Perevostchikov, Victor A.

Skoupov, Vladimir D.

Weitere Mitwirkende

Gloumov, Victor

Inhaltsverzeichnis

1;Preface;6
2;Contents;9
3;List of abbreviations;11
4;Names and abbreviations of publishing houses and periodicals;14
5;Introduction;16
6;1 Basic technological processes and defect formation in the components of device structures;20
6.1;1.1. General;20
6.2;1.2 General information on the technology of growing crystals and their mechanical treatment;32
6.3;1.3 Technological processes of dielectric film deposition and semiconductor oxidation;50
6.4;1.4 Diffusive processes in semiconductors;57
7;2 Effects of defects on electrophysical and functional parameters in semiconducting structures and devices;94
7.1;2.1 General;94
7.2;2.2 Point defects, aggregates and microdefects;97
7.3;2.3 Dislocations and stacking faults;110
7.4;2.4 Defects in the device layers of the silicon-on-dielectric (SOD) structures;117
8;3 Techniques for high–temperature gettering;141
8.1;3.1 Gettering by structurally–damaged layers;141
8.2;3.2 Gettering by heterophase layers;176
8.3;3.3 Thermal treatments in gettering ambients;181
8.4;3.4 Internal getter;183
8.5;3.5 Comparative analysis of gettering technique efficiency;193
8.6;3.6 Mechanisms and models of gettering processes;196
9;4 Physical foundations for low–temperature gettering techniques;211
9.1;4.1 Gettering effects during an abrasive and chemical treatment of crystal surfaces;212
9.2;4.2 Structural changes in hydrostatically–compressed semiconductors;234
9.3;4.3 Structural changes in microdefects and properties of silicon and silicon–based ultrasonically–irradiated structures;265
9.4;4.4 Irradiation-stimulated gettering;298
10;CONCLUSION;355
11;References;356
12;Subject Index;380
13;Authors’ Index;396