Pearton GaN and ZnO-based Materials and Devices

2012
ISBN: 978-3-642-23521-4
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band 156, 486 Seiten, eBook

Reihe: Springer Series in Materials Science

The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

Zielgruppe

Graduate

Autoren/Hrsg.

Pearton, Stephen

Inhaltsverzeichnis

1. UV LEDs-Michael Shur (RPI, email [e-mail])
2. Non-Polar GaN Growth-Jung Han (Yale, email [e-mail])
3. High Quality AlGaN Alloys-Hongxing Jiang and Jingyu Lin (Texas Tech, email [e-mail] and [e-mail])

4. Bulk AlN for UV LEDs –L.J. Schowalter (Crystal IS, email [e-mail])
5. Enhancement of the Light-Extraction Efficiency of GaN-Based Light Emitting Diodes-Jihyun Kim (Korea University, Seoul 136-701, Korea, email: hyunhyun7@.korea.ac.kr )
6. GaN-Based Sensors-F. Ren (Univ. Florida, email [e-mail])
7. III-N Alloys for Solar Power Conversion-Wladek Walukievicz (LBL, email [e-mail])

8. GaN HEMT Technology-Wayne Johnson (Kopin, email [e-mail])
9. GaN Power Devices-John Shen (Univ.Central Florida, email [e-mail])-
10. Nitride Nanostructures-Li-Chyong Chen (National Taiwan University, email [e-mail])
11. Radiation-Induced Defects in GaN-Alexander Polyakov (IRM, Russia, email [e-mail])
12. Electron Injection Effects in GaN-L. Chernyak (Univ. Central Florida, email [e-mail])

13. Progress and Prospect of Rare-Earth Nitrides- R. Palai ( Department of Physics, University of Puerto Rico, San Juan, PR, 00931, USA, email: [e-mail])-

14. Advances in PLD of ZnO and related compounds-Ashutosh Tiwari, (Dept. of Materials Science & Engineering, University of Utah, E-mail: [e-mail])
15. ZnO nanowires and p-type doping-Deli Wang (UCSD, Electrical and Computer Engineering, email [e-mail])
16. Multifunctional ZnO Structures-Yicheng Lu (Rutgers, email [e-mail])-

17. ZnO/MgZnO Quantum Wells-C. Jagadish (ANU, Australia, email [e-mail])
18. GZO TFTs-E.Fortunato(CENIMAT, FCT-UNL, Campus de Caparica, 2829-516 Caparica, Portugal, email [e-mail] )

Über Autor(innen)

Steve Pearton is one of the leaders in the field of GaN research and a co-author of another related successful Springer book.