Buch, Englisch, 319 Seiten, Format (B × H): 157 mm x 235 mm, Gewicht: 638 g
Reihe: MRS Proceedings
Buch, Englisch, 319 Seiten, Format (B × H): 157 mm x 235 mm, Gewicht: 638 g
Reihe: MRS Proceedings
ISBN: 978-1-60511-040-0
Verlag: Cambridge University Press
Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Preface; Part I. Ultra Shallow Junctions I; Part II. Shallow Junction Contacting; Part III. Poster Session; Part IV. Ultra Shallow Junctions II; Part V. Solid Phase Epitaxial Regrowth; Part VI. Modeling and Simulation; Author index; Subject index.
