Low Power and Reliable SRAM Memory Cell and Array Design

2011
ISBN: 978-3-642-27018-5
Verlag: Springer

Buch, Englisch, 144 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 248 g

Reihe: Springer Series in Advanced Microelectronics

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

Zielgruppe

Research

Autoren/Hrsg.

Osada, Kenichi

Ishibashi, Koichiro

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie

Inhaltsverzeichnis

Preface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future Technologies