Omura SOI Lubistors

Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors
1. Auflage 2013
ISBN: 978-1-118-48793-8
Verlag: John Wiley & Sons
Format: EPUB
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 320 Seiten, E-Book

Reihe: Wiley - IEEE

Advanced level consolidation of the technology, physicsand design aspects of silicon-on-insulator (SOI)lubistors
No comprehensive description of the physics and possibleapplications of the Lubistor can be found in a single source eventhough the Lubistor is already being used in SOI LSIs. The bookprovides, for the first time, a comprehensive understanding of thephysics of the Lubistor. The author argues that a clearunderstanding of the fundamental physics of the pn junction isessential to allowing scientists and engineers to propose newdevices. Since 2001 IBM has been applying the Lubistor tocommercial SOI LSIs (large scale integrated devices) used in PCsand game machines. It is a key device in that it provideselectrostatic protection to the LSIs. The book explains thedevice modeling for such applications, and covers the recent analogcircuit application of the voltage reference circuit.
The author also reviews the physics and the modeling of idealand non-ideal pn junctions through reconsideration of theShockley's theory, offering readers an opportunity to studythe physics of pn junction. Pn-junction devices are alreadyapplied to the optical communication system as the light emitterand the receiver. Alternatively, optical signal modulatorsare proposed for coupling the Si optical waveguide with thepn-junction injector. The book also explores the photoniccrystal physics and device applications of the Lubistor.
* Advanced level consolidation of the technology, physics anddesign aspects of silicon-on-insulator (SOI) lubistors
* Written by the inventor of the Lubistor, this volume describesthe technology for readers to understand the physics andapplications of the device
* First book devoted to the Lubistor transistor, presently beingutilized in electrostatic discharge (ESD) applications in SOItechnology, a growing market for semiconductor devices and advancedtechnologies
* Approaches the topic in a systematic manner, from physicaltheory, through to modelling, and finally circuit applications
This is an advanced level book requiring knowledge of electricaland electronics engineering at graduate level.
Contents includes: Concept of Ideal pn Junction/Proposalof Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistor(Lubistor)/ Noise Characteristics and Modeling of Lubistor/NegativeConductance Properties in Extremely Thin SOI Lubistors/
Two-Dimensionally Confined Injection Phenomena at LowTemperatures in Sub-10-nm-Thick SOI Lubistors/ Experimental Studyof Two-Dimensional Confinement Effects on Reverse-Biased CurrentCharacteristics of Ultra-Thin SOI Lubistors/
Gate-Controlled Bipolar Action in Ultra-thin Dynamic ThresholdSOI MOSFET/Sub-Circuit Models of SOI Lubistors for ElectrostaticDischarge Protection Circuit Design and Their Applications/A NewBasic Element for Neural Logic Functions and Functionality inCircuit Applications/Possible Implementation of SOI Lubistors intoConventional Logic Circuits/Potentiality of Electro-Optic ModulatorBased on SOI Waveguide/Principles of ParameterExtraction/Feasibility of Lubistor-Based Avalanche PhotoTransistor

Autoren/Hrsg.

Omura, Yasuhisa