Buch, Englisch, 208 Seiten, Format (B × H): 170 mm x 244 mm, Gewicht: 395 g
Reihe: Topics in Current Physics
Buch, Englisch, 208 Seiten, Format (B × H): 170 mm x 244 mm, Gewicht: 395 g
Reihe: Topics in Current Physics
ISBN: 978-3-642-46501-7
Verlag: Springer
The characterization of thin films and solid interfaces as well as the determina tion of concentration profiles in thin solid layers is one of the fields which re quire a rapid transfer of the results from basic research to technological applica tions and developments. It is the merit of the Dr. Wilhelm Heinrich and Else Heraeus-Stiftung to promote such a transfer by organizing high standard seminars mostly held at the "Physikzentrum" in Bad Honnef near Bonn. The present book has been stimulated by one of these seminars assembling most of the invited speakers as co-authors. The editor appreciates the cooperation of his colleagues contributing to this book. H. Oechsner Kaiserslautern, April 1984 v Contents 1. Introduction. ByH. Oechsner. 1. 1 Requirements for Thin Film and In-Depth Analysis. 1 1. 2 Object and Outl i ne of the Book. 2 4 References 2. The Application of Beam and Diffraction Techniques to Thin Film and Surface Micro-Analysis. By H. W. Werner (With 25 Fi gures). 5 2. 1 Methods to Determine Chemical Structures in Material Research 5 2. 2 Selected Analytical Features Used to Determine Chemical Structures 9 2. 2. 1 Depth Profi 1 ing. 9 9 a) Destructive Depth Profiling b) Nondestructive Methods for Depth and Thin Film Analysis 15 19 2. 2. 2 Microspot Analysis and Element Imaging 2. 3 Determining Physical Structures in Material Research. 27 2. 3. 1 X-Ray Diffraction. 27 2. 3. 2 X-Ray Double Crystal Diffraction. 28 2. 3.
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Weitere Infos & Material
1. Introduction.- 1.1 Requirements for Thin Film and In-Depth Analysis.- 1.2 Object and Outline of the Book.- References.- 2. The Application of Beam and Diffraction Techniques to Thin Film and Surface Micro-Analysis.- 2.1 Methods to Determine Chemical Structures in Material Research.- 2.2 Selected Analytical Features Used to Determine Chemical Structures.- 2.3 Determining Physical Structures in Material Research.- 2.4 Application of Different Microanalytical Techniques to Specific Analytical Problems.- 2.5 Future Prospects.- References.- 3. Depth Profile and Interface Analysis of Thin Films by AES and XPS.- 3.1 Quantification from First Principles.- 3.2 Initial Transient Layer.- 3.3 Steady-State Region.- 3.4 Film-Substrate Interface.- References.- 4. Secondary Neutral Mass Spectrometry (SNMS) and Its Application to Depth Profile and Interface Analysis.- 4.1 Background.- 4.2 Experimental Method.- 4.3 Quantification of SNMS.- 4.4 Applications of SNMS to Depth Profile Analysis.- 4.5 Concluding Remarks.- References.- 5. In-Situ Laser Measurements of Sputter Rates During SIMS/AES In-Depth Profiling.- 5.1 Background.- 5.2 Principles of Laser Technique.- 5.3 Experiments.- 5.4 Results and Discussion.- 5.5 Conclusion.- References.- 6. Physical Limitations to Sputter Profiling at Interfaces — Model Experiments with Ge/Si Using KARMA.- 6.1 Background.- 6.2 Experimental Approach.- 6.3 Conversion of Raw Sputter Profiles into Depth Profiles.- 6.4 Depth Profiles of the Ge/Si Interface.- 6.5 Dose Effects and Preferential Sputtering.- 6.6 Depth Resolution in Sputter Profiling.- 6.7 Summary and Outlook.- References.- 7. Depth Resolution and Quantitative Evaluation of AES Sputtering Profiles.- 7.1 Background.- 7.2 Calibration of the Depth Scale.- 7.3 Calibration of theConcentration Scale.- 7.4 Depth Resolution in Sputter Profiling.- 7.5 Determination of the Resolution function.- 7.6 Deconvolution Procedures.- 7.7 Conclusion.- References.- 8. The Theory of Recoil Mixing in Solids.- 8.1 Background.- 8.2 Review of Recoil Mixing Models.- 8.3 General Formulation of Atomic Relocation Phenomena.- 8.4 Solutions to the Specific Mixing Models.- 8.5 Summary and Outlook.- 8.6 List of Symbols.- References.- Additional References with Titles.
