Nanotechnology 2010

1. Auflage 2010
ISBN: 978-1-4398-3402-2
Verlag: CRC Press

Buch, Englisch, 636 Seiten, Format (B × H): 216 mm x 279 mm, Gewicht: 1973 g

NSTI's nanotechnology conferences have built a tradition of being the most prestigious forum in the world for leading nano scientists, and Nanotech 2010 is no exception. Top nano scientists offer an up-to-date global perspective on the latest developments in nanotechnology. More than mere proceedings, these volumes cut across every scientific and engineering discipline to provide the most complete record of current accomplishments in Nanotech. Information from past conferences has been compiled into authoritative and comprehensive compendiums and made available (along with pricing information) here on our site. Contents of the proceedings for this year's conference and expo will be forthcoming. Nanotech is available in print and on CD-ROM.

Autoren/Hrsg.

Nsti

NSTI

Fachgebiete

• Naturwissenschaften Chemie Physikalische Chemie Molekulare Chemische Nanostrukturen
• Technische Wissenschaften Technik Allgemein Nanotechnologie
• Technische Wissenschaften Verfahrenstechnik | Chemieingenieurwesen | Biotechnologie Biotechnologie Biotechnologie: Mikrotechnologie, Nanobiotechnologie
• Naturwissenschaften Physik Quantenphysik

Inhaltsverzeichnis

Electronicsand Photonics
Adhesion of moulding compounds. Can material pre-selection increase the reliability of electronic components?
R. Pufall, B. Michel, E. Kaulfersch
Application of YAG Laser Micro-Welding in MEMS Packaging
P. Bozorgi
Backside Nanoscale Texturing to Improve IR Response of Silicon Photodetectors
L. Forbes, M.Y. Louie
Control of Conducting Path in Resistive Memory Utilizing Ferritin Protein with Metal Nano Dot
M. Uenuma, B. Zheng, K. Kawano, M. Horita, S. Yoshii, I. Yamashita, Y. Uraoka
3-state Quantum Dot Gate FETs in Designing High Sampling Rate ADCs
S. Karmakar, J.A. Chandy, F.C. Jain
Comprehensive Examination of Intrinsic-Parameter-Induced Characteristic Fluctuations in 16-nm-Gate CMOS Devices
M-H Han, Y. Li
Neighbouring Levels Statistic and Shape of Quantum Dots: Si/Sio2
I. Filikhin, S.G. Matinyan, B. Vlahovic
Enhancement of Defect Tolerance in the QCA-based Programmable Logic Array (PLA)
T. Notsu, K. Miura, K. Nakamae
Critical currents in graphene ribbon Josephson junctions
P.G. Gabrielli
Atomistic Simulations of Electronic Structure in Realistically-Sized Wurtzite InN/GaN Quantum Dots
K. Yalavarthi, V. Gaddipati, S. Ahmed
Jet-printed Si nanowires for flexible backplane applications
W.S. Wong, S. Raychaudhuri, S. Sambandan, R. Lujan, R.A. Street
Self–Heating Effects in Nanowire Transistors
A. Hossain, K. Raleva, D. Vasileska, S.M. Goodnick
Stable Light Emiting Electrochemical Cells Based in Supramolecular Interactions
R.D. Costa, M. Lenes, E. Ortí, H.J. Bolink, S. Graber, E.C. Constable
Optical properties of silicon nanoparticles: Influence of etching, surface oxidation and surface functionalization
A. Gupta, S. Kluge, C. Schulz, H. Wiggers
Growth and investigations on Fe/MgO/Fe magnetic tunnel junctions fabricated by dual ion beam sputtering technique
B. Singh, P. Gupta, S. Chaudhary, D.K. Pandya, S.C. Kashyap
The Effects of Gamma rays on p-channel MOSFET
M.A. Iqbal, U. Firdous
Characteristic Optimization of Single- and Double-Gate Tunneling Field Effect Transistors
K-F Lee, M-H Han, I-