Niewa / Meissner | Ammonothermal Synthesis and Crystal Growth of Nitrides | Buch | 978-3-030-56307-3 | sack.de

Buch, Englisch, Band 304, 342 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 552 g

Reihe: Springer Series in Materials Science

Niewa / Meissner

Ammonothermal Synthesis and Crystal Growth of Nitrides

Chemistry and Technology
1. Auflage 2021
ISBN: 978-3-030-56307-3
Verlag: Springer International Publishing

Chemistry and Technology

Buch, Englisch, Band 304, 342 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 552 g

Reihe: Springer Series in Materials Science

ISBN: 978-3-030-56307-3
Verlag: Springer International Publishing


This book provides a collection of contributed chapters, delivering a comprehensive overview of topics related to the synthesis and crystal growth of nitride compounds under supercritical ammonia conditions. Focusing on key chemical and technological aspects of ammonothermal synthesis and growth of functional nitride compounds, the book also describes many innovative techniques for in-situ observation and presents new data fundamental for materials synthesis under ammonothermal conditions. With its detailed coverage of many thermodynamic and kinetics aspects, which are necessary for understanding and controlling crystal growth, this contributed volume is the ideal companion to materials chemists and engineers at any point in their journey in this rich and exciting field.

Niewa / Meissner Ammonothermal Synthesis and Crystal Growth of Nitrides jetzt bestellen!

Zielgruppe


Research

Weitere Infos & Material


Part I: General Importance for the Synthesis and Crystal Growth of Nitrides.- Part II: Technology of Ammonothermal Synthesis.- Part III: Chemistry of Ammonothermal Synthesis.- Part IV: Future Aspects and Challenges.


Dr. Elke Meissner is a senior scientist at the Department Materials of the Fraunhofer Institute of Integrated Systems and Device Technology (IISB) in Erlangen, Germany and head of the Nitrides group. In addition to her activities at the IISB, she carries out gallium nitride (GaN) research at the Fraunhofer Technology Center for Semiconductor Materials (THM) in Freiberg (Saxony, Germany) and fundamental research at the Technical Faculty of University of Erlangen-Nuremberg at the Chair for Electron Devices. She boasts more than 20 years of experience in various fields ranging from applied and experimental mineralogy, silicon nitride and related processes under high pressure and temperature as well as the crystal growth of GaN and AlN. She is inventor or co-inventor of international patents, and has authored numerous peer-reviewed scientific publications. She has served on the chairs of high-profile international conferences, and is member of the international steering committee of the International Workshop on Bulk Nitride Semiconductors (IWBNS).

Prof. Dr. Rainer Niewa is a professor of inorganic chemistry at the University of Stuttgart, Germany. He has long-standing experience in inorganic materials synthesis including high pressure-high temperature, solvothermal, electrochemical and molten flux preparation and crystal growth, along with an array of various characterization techniques. One of his main research areas is the synthesis and characterization of novel functional materials with one focus on a wide range of nitrides and related compounds. He has authored numerous peer-reviewed scientific publications, and is member of the international steering committee of the International Workshop on Bulk Nitride Semiconductors (IWBNS).



Ihre Fragen, Wünsche oder Anmerkungen
Vorname*
Nachname*
Ihre E-Mail-Adresse*
Kundennr.
Ihre Nachricht*
Lediglich mit * gekennzeichnete Felder sind Pflichtfelder.
Wenn Sie die im Kontaktformular eingegebenen Daten durch Klick auf den nachfolgenden Button übersenden, erklären Sie sich damit einverstanden, dass wir Ihr Angaben für die Beantwortung Ihrer Anfrage verwenden. Selbstverständlich werden Ihre Daten vertraulich behandelt und nicht an Dritte weitergegeben. Sie können der Verwendung Ihrer Daten jederzeit widersprechen. Das Datenhandling bei Sack Fachmedien erklären wir Ihnen in unserer Datenschutzerklärung.