Buch, Englisch, 434 Seiten, Format (B × H): 168 mm x 244 mm, Gewicht: 912 g
Buch, Englisch, 434 Seiten, Format (B × H): 168 mm x 244 mm, Gewicht: 912 g
ISBN: 978-0-444-51386-1
Verlag: Elsevier Science
The book contains 5 chapters with 19 contributions form internationally well acknowledged experts in various fields of crystal growth. The topics are ranging from fundamentals (thermodynamic of epitaxy growth, kinetics, morphology, modeling) to new crystal materials (carbon nanocrystals and nanotubes, biological crystals), to technology (Silicon Czochralski growth, oxide growth, III-IV epitaxy) and characterization (point defects, X-ray imaging, in-situ STM). It covers the treatment of bulk growth as well as epitaxy by anorganic and organic materials.
Zielgruppe
Universities for science and technology, research institutes, physicists and chemists in the electronic industry.
Autoren/Hrsg.
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Contents
Preface
Acknowledgements
Chapter 1: Fundamentals
Chapter 2: Modeling
Chapter 3: Future Topics
Chapter 4: Crystal Growth Technology
Chapter 5: Crystal Defects and Characterization