Morkoc / Morkoç Handbook of Nitride Semiconductors and Devices

Vol. 1: Materials Properties, Physics and Growth
1., Volume 1
ISBN: 978-3-527-62846-9
Verlag: Wiley-VCH
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 1257 Seiten, E-Book

Reihe: Handbook of Nitride Semiconductors and Devices

Dieser erste Band geht auf Eigenschaften und Wachstumsverhalten von Gallium-Nitriden unter Berücksichtigung von ausgedehnten Defekten, Punktdefekten und Dotierung ein. Ein Schwerpunkt liegt auf den Abscheidungsmethoden VPE, CVD und MBE und Wachstum unter Hochdruckbedingungen.

Autoren/Hrsg.

Morkoc, Hadis

Morkoç, Hadis

Inhaltsverzeichnis

1 General Properties of Nitrides
1.1 Crystal Structure of Nitrides
1.2 Gallium Nitride
1.3 Aluminum Nitride
1.4 Indium Nitride
1.5 Ternary and Quaternary Alloys
 
2 Electronic Band Structure and Polarization Effects
2.1 Band Structure Calculations
2.2 General Strain Considerations
2.3 Effect of Strain on the Band Structure of GaN
2.4 k_p Theory and the Quasi-Cubic Model
2.5 Quasi-Cubic Approximation
2.6 Temperature Dependence of Wurtzite GaN Bandgap
2.7 Sphalerite (Zinc Blende) GaN
2.8 AlN
2.9 InN
2.10 Band Parameters for Dilute Nitrides
2.11 Confined States
2.12 Polarization Effects
3 Growth and Growth Methods for Nitride Semiconductors
 
3.1 Substrates for Nitride Epitaxy
3.2 A Primer on Conventional Substrates and their Preparation for Growth
3.3 GaN Epitaxial Relationship to Substrates
3.4 Nitride Growth Techniques
3.5 The Art and Technology of Growth of Nitrides
3.6 Concluding Remarks
 
4 Extended Defects, Point Defects, Role of Hydrogen, and Doping, Including Transition Metals
4.1 A Primer on Extended Defects
4.2 TEM Analysis of High Nitrogen Pressure (HNP) Solution Growth (HNPSG) and HVPE-Grown GaN
4.3 Point Defects and Autodoping
4.4 Defect Analysis by Deep-Level Transient Spectroscopy
4.5 Minority Carrier Lifetime
4.6 Positron Annihilation
4.7 Fourier Transform Infrared (FTIR), Electron Paramagnetic Resonance, and Optical Detection of Magnetic Resonance
4.8 Role of Hydrogen
4.9 Intentional Doping
4.10 Ion Implantation and Diffusion for Doping
4.11 Summary

Über Autor(innen)

Hadis Morkoç received his Ph.D. degree in Electrical Engineering from Cornell University. From 1978 to 1997 he was with the University of Illinois, then joined the newly established School of Engineering at the Virginia Commonwealth University in Richmond. He and his group have been responsible for a number of advancements in GaN and devices based on them. Professor Morkoç has authored several books and numerous book chapters and articles. He serves or has served as a consultant to some 20 major industrial laboratories. Professor Morkoç is, among others, a Fellow of the American Physical Society, the Material Research Society, and of the Optical Society of America.