Buch, Englisch, Band 32, 489 Seiten, Format (B × H): 160 mm x 241 mm, Gewicht: 934 g
Buch, Englisch, Band 32, 489 Seiten, Format (B × H): 160 mm x 241 mm, Gewicht: 934 g
Reihe: Springer Series in Materials Science
ISBN: 978-3-540-64038-7
Verlag: Springer Berlin Heidelberg
Under the umbrella of nitride semiconductors and devices, the book treats semiconductor fundamentals, technology and nanotechnology with a clarity and depth not found elsewhere. The book is a combination of graduate level text book with all the necessary basis and derivations involving semiconductor and device physics and engineering. It covers both theory and practice, and the major developments in light-emitting Nitride semiconductors. It includes extensive tabular compilation of properties. The depth and scope of the book and the easily understandable treatment of its subject matter are certain to lift any a-priori cloud present.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
- Naturwissenschaften Physik Elektromagnetismus Elektrizität, Elektrodynamik
- Naturwissenschaften Physik Elektromagnetismus Magnetismus
Weitere Infos & Material
1. Introduction.- 2. General Properties of Nitrides.- 2.1 Crystal Structure of Nitrides.- 2.2 Gallium Nitride.- 2.3 Aluminum Nitride.- 2.4 Indium Nitride.- 2.5 Ternary and Quaternary Alloys.- 2.6 Substrates for Nitride Epitaxy.- 2A Appendix: Fundamental Data for Nitride Systems.- 3. Electronic Band Structure of Bulk and QW Nitrides.- 3.1 Band-Structure Calculations.- 3.2 Effect of Strain on the Band Structure of GaN.- 3.3 k·p Theory and the Quasi-Cubic Model.- 3.4 Quasi-Cubic Approximation.- 3.5 Confined States.- 3.6 Conduction Band.- 3.7 Valence Band.- 3.8 Exciton Binding Energy in Quantum Wells.- 3.9 Polarization Effects.- 3A Appendix.- 4. Growth of Nitride Semiconductors.- 4.1 Bulk Growth.- 4.2 Substrates Used.- 4.3 Substrate Preparation.- 4.4 Substrate Temperature.- 4.5 Epitaxial Relationship to Sapphire.- 4.6 Growth by Hydride Vapor Phase Epitaxy (HVPE).- 4.7 Growth by OMVPE (MOCVD).- 4.8 Molecular Beam Epitaxy.- 4.9 Growth on 6H-SiC (0001).- 4.10 Growth on ZnO.- 4.11 Growth on GaN.- 4.12 Growth of p-Type GaN.- 4.13 Growth of n-Type InN.- 4.14 Growth of n-Type Ternary and Quaternary Alloys.- 4.15 Growth of p-Type Ternary and Quaternary Alloys.- 4.16 Critical Thickness.- 5. Defects and Doping.- 5.1 Dislocations.- 5.2 Stacking-Fault Defects.- 5.3 Point Defects and Autodoping.- 5.4 Intentional Doping.- 5.5 Defect Analysis by Deep-Level Transient Spectroscopy.- 5.6 Summary.- 6. Metal Contacts to GaN.- 6.1 A Primer for Semiconductor-Metal Contacts.- 6.2 Current Flow in Metal-Semiconductor Junctions.- 6.3 Resistance of an Ohmic Contact.- 6.4 Determination of the Contact Resistivity.- 6.5 Ohmic Contacts to GaN.- 6.6 Structural Analysis.- 6.7 Observations.- 7. Determination of Impurity and Carrier Concentrations.- 7.1 Impurity Binding Energy.- 7.2 Conductivity Type: HotProbe and Hall Measurements.- 7.3 Density of States and Carrier Concentration.- 7.4 Electron and Hole Concentrations.- 7.5 Temperature Dependence of the Hole Concentration.- 7.6 Temperature Dependence of the Electron Concentration.- 7.7 Multiple Occupancy of the Valence Bands.- 7A Appendix: Fermi Integral.- 8. Carrier Transport.- 8.1 Ionized Impurity Scattering.- 8.2 Polar-Optical Phonon Scattering.- 8.3 Piezoelectric Scattering.- 8.4 Acoustic Phonon Scattering.- 8.5 Alloy Scattering.- 8.6 The Hall Factor.- 8.7 Other Methods Used for Calculating the Mobility in n-GaN.- 8.8 Measured vis. a vis. Calculated Mobilities in GaN.- 8.9 Transport in 2D n-Type GaN.- 8.10 Transport in p-Type GaN and AlGaN.- 8.11 Carrier Transport in InN.- 8.12 Carrier Transport in AlN.- 8.13 Observation.- 9. The p-n Junction.- 9.1 Heterojunctions.- 9.2 Band Discontinuities.- 9.3 Electrostatic Characteristics of p-n Heterojunctions.- 9.4 Current-Voltage Characteristics on p-n Junctions.- 9.5 Calculation and Experimental I-V Characteristics of GaN Based p-n Juctions.- 9.6 Concluding Remarks.- 10. Optical Processes in Nitride Semiconductors.- 10.1 Absorption and Emission.- 10.2 Band-to-Band Transitions.- 10.3 Optical Transitions in GaN.- 10.4 Optical Properties of Nitride Heterostructures.- 11. Light-Emitting Diodes.- 11.1 Current-Conduction Mechanism in LED-Like Structures.- 11.2 Optical Output Power.- 11.3 Losses and Efficiency.- 11.4 Visible-Light Emitting Diodes.- 11.5 Nitride LED Performance.- 11.6 On the Nature of Light Emission in Nitride-Based LEDs.- 11.7 LED Degradation.- 11.8 Luminescence Conversion and White- Light Generation With Nitride LEDs.- 11.9 Organic LEDs.- 12. Semiconductor Lasers.- 12.1 A Primer to the Principles of Lasers.- 12.2 Fundamentals of Semiconductor Lasers.- 12.3 Waveguiding.- 12.4 Loss and Threshold.- 12.5 Optical Gain.- 12.6 Coulombic Effects.- 12.7 Gain Calculations for GaN.- 12.8 Threshold Current.- 12.9 Analysis of Injection Lasers with Simplifying Assumptions.- 12.10 Recombination Lifetime.- 12.11 Quantum Efficiency.- 12.12 Gain Spectra of InGaN Injection Lasers.- 12.13 Observations.- 12.14 A Succinct Review of the Laser Evolution in Nitrides.- References.
