Minchev / Pramatarova Molecular Beam Epitaxy

Erscheinungsjahr 1991
ISBN: 978-3-0357-0456-3
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection

E-Book, Englisch, 210 Seiten

Materials Science Forum Vol. 69

Autoren/Hrsg.

Minchev, G.M.

Pramatarova, Lilyana

Inhaltsverzeichnis

Preparation and Characterizations of High Quality InGaAs/GaAs Strained Multi-Quantum Wells Grown by MBE
Influence of Growth Parameters on the Surface Morphology of MBE Grown GaAs and AlxGa1-xAs Layers

Optical Switching of Double-Barrier Resonant Tunneling AlGaAs/GaAs Diode
Sb Delta-Type Doping in Si-MBE Superlattices
Molecular Beam Heteroepitaxy on Silicon Substrates
MBE Growth, Properties and Applications of Epitaxial Dielectric Fluoride Films on Semiconductors
Evaporation and Incorporation of Gallium Atoms and Ions during Si MBE with a Sublimating Source
Comparison of Growth Kinetics and Source Material Utilization Efficiency in MBE under Conventional and Ale Conditions
PED Mechanism Studied by Moleculardynamic Computer Simulation
Growth of Aluminum and Copper on Silicon by Molecular Beam Epitaxy
MBE System for Research
Optical Simulation of the Effusion Molecular Beams in Epitaxy Technology
The Liquid Metal Ion Source for Molecular Beam Epitaxy of Silicon

Prior to Growth Examinations of the Quality of GaAs Substrates
The Advantages of Selectively Delta-Doped III-V Heterostructures for HEMT Applications
III-V Heterostructure Lasers with Short Period Superlattice Recombination Region
AlGaAs/GaAs Heterojunction Photodiodes Grown by MBE
An Extension of the Interfacial Layer Theory for Mixed Phase Metal-Semiconductor Contact
Electrophysical Parameters of the Metal-Semiconductor Interface in MBE and VPE Grown GaAs Schottky Contacts
The Dependence of Schottky Barrier Height of Metal-Semiconductor Contacts on the Ratio of Interfacial Area Occupied by Different Metal Components
MBE Grown Planar Doped Barrier Diodes for Microwave Purposes
Interface Symmetry and Heteroepitaxy
MBE Growth and Investigation of Heteroepitaxial CdTe, ZnTe Layers and CdTe-ZnTe Superlattices
Raman Scattering by Phonons in Short-Period GaAs/AlAs Superlattices

Temperature Dependence of Raman Scattering in Monocrystals and Epitaxial Thin Films of ZnSe
Low Temperature Photoluminescence of ZnSe Strained Thin Layers Grown on GaAs by MBE
Computer Simulation of Interdiffusion Processes on II-VI Superlattices
MBE Growth and Properties of Si/GeSi Superlattices on Si (111)
The Pair-Doped Delta-Superlattice: An Inner Probe to Measure Monolayer Doping Fluctuations in Semiconductors
Eu2+ and Sm2+ Ions as a Photoluminescent Probe in Epitaxial CaF2 Films on Semiconductors
Low-Temperature Anomalies of 2D Electrons n-AlxGa1-xAs/GaAs Transfer Phenomena
In Situ REM Study of Silicon Surface during MBE Processes
Investigation of Sublimation Process of (111) and (100)CdTe Films by Rheed Intensity Oscillation
Composition of Oxides on (100) GaAs Produced by Oxygen Ion Bombardment
Characteristics and Application of Thin Epitaxial Dielectrics Formed by MBE
SEM Investigation of Defects on InP
Characterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by Photoluminescence
Ultrahigh Vacuum System
GaAs and GaSb Treatment for MBE