Trap Level Spectroscopy in Amorphous Semiconductors

Erscheinungsjahr 2010
ISBN: 978-0-323-16503-7
Verlag: William Andrew Publishing

Buch, Englisch, 128 Seiten, Format (B × H): 152 mm x 229 mm

Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most common spectroscopic techniques but also describes their advantages and disadvantages.


- Provides information on the most used spectroscopic techniques
- Discusses the advantages and disadvantages of each technique

Zielgruppe

Researchers and postgraduate students in materials science and solid state physics.

Autoren/Hrsg.

Mikla, Victor V.

Mikla, Victor I.

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie

Inhaltsverzeichnis

- Introduction
- Thermally stimulated depolarization currents in amorphous chalcogenides
- Carrier transport processes in amorphous solids
- Time-of-flight experiments in amorphous chalcogenide semiconductors
- Xerographic spectroscopy of states in mobility gap
- Photoinduced effects on states in the mobility gap
- Spectroscopic studies of gap states and laser-induced structural transformations in se-based as-free amorphous semiconductors

Über Autor(innen)

Mikla, Victor V.
Dr. Victor V. Mikla is affiliated with the Physical & Mathematical Disciplines, Department of Humanities & Natural Sciences, Uzhhgorod National University, Uzhhgorod,Ukraine

Mikla, Victor I.
Victor I. Mikla, PhD, is Chair of Physical & Mathematical Disciplines in the Department of Humanities & Natural Sciences at Uzhhgorod National University, Uzhhorod, Ukraine. Dr. Mikla specializes in photo-electronic materials and devices, and has published research articles widely on a broad range of inter-disciplinary topics including metastable states in amorphous chalcogenides, trap level spectroscopy, medical and non-medical imaging applications of amorphous semiconductors, xerographic spectroscopy, photo-induced & structural changes, and raman scattering.