Buch, Englisch, 261 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 429 g
The Monte-Carlo Perspective
Buch, Englisch, 261 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 429 g
Reihe: Computational Microelectronics
ISBN: 978-3-7091-7226-1
Verlag: Springer Vienna
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
- Interdisziplinäres Wissenschaften Wissenschaften Interdisziplinär
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik
- Mathematik | Informatik Mathematik Stochastik
- Technische Wissenschaften Technik Allgemein Technik: Allgemeines
- Naturwissenschaften Physik Physik Allgemein Theoretische Physik, Mathematische Physik, Computerphysik
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
Weitere Infos & Material
1 Introduction.- References.- 2 Semiclassical Transport Theory.- 2.1 The Boltzmann Transport Equation.- 2.2 Balance Equations.- 2.3 The Microscopic Relaxation Time.- 2.4 Fluctuations in the Steady-State 25 References.- 3 The Monte-Carlo Method.- 3.1 Basic Monte-Carlo Methods.- 3.2 The Monte-Carlo Solver of the Boltzmann Equation.- 3.3 Velocity Autocorrelation Function.- 3.4 Basic Statistics.- 3.5 Convergence Estimation.- References.- 4 Scattering Mechanisms.- 4.1 Phonon Scattering.- 4.2 Alloy Scattering.- 4.3 Impurity Scattering.- 4.4 Impact Ionization by Electrons.- 4.5 Surface Roughness Scattering.- References.- 5 Full-Band Structure.- 5.1 Basic Properties of the Band Structure of Relaxed Silicon.- 5.2 Basic Properties of the Band Structure of Strained SiGe.- 5.3 k-Space Grid.- 5.4 Calculation of the Density of States.- 5.5 Mass Tensor Evaluation.- 5.6 Particle Motion in Phase-Space.- 5.7 Selection of a Final State in k-Space.- References.- 6 Device Simulation.- 6.1 Device Discretization.- 6.2 Band Edges.- 6.3 Poisson Equation.- 6.4 Self-Consistent Device Simulation.- 6.5 Nonlinear Poisson Equation.- 6.6 Nonself-Consistent Device Simulation.- 6.7 Statistical Enhancement.- 6.8 Terminal Current Estimation.- 6.9 Contact Resistance.- 6.10 Normalization of Physical Quantities.- References.- 7 Momentum-Based Transport Models.- 7.1 The Hydrodynamic Model.- 7.2 Small-Signal Analysis.- 7.3 Noise Analysis.- 7.4 The Drift-Diffusion Model.- 7.5 Transport and Noise Parameter Simulation.- References.- 8 Stochastic Properties of Monte-Carlo Device Simulations.- 8.1 Stochastic Error.- 8.2 In-Advance CPU Time Estimation.- References.- 9 Results.- 9.1 N+NN+ and P+PP+ Structures.- 9.2 MOSFETs.- 9.3 SiGe HBTs.- References.
