Buch, Englisch, 65 Seiten, Format (B × H): 191 mm x 235 mm, Gewicht: 161 g
Reihe: Synthesis Lectures on Emerging Engineering Technologies
Buch, Englisch, 65 Seiten, Format (B × H): 191 mm x 235 mm, Gewicht: 161 g
Reihe: Synthesis Lectures on Emerging Engineering Technologies
ISBN: 978-3-031-00900-6
Verlag: Springer International Publishing
Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
Zielgruppe
Professional/practitioner
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik
- Technische Wissenschaften Technik Allgemein Technik: Allgemeines
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
- Mathematik | Informatik EDV | Informatik Technische Informatik
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde
Weitere Infos & Material
Introduction.- GaN-based HEMTs and MOSHEMTs.- III-V Materials and Devices.- Summary.- References.- Authors' Biographies.